Direct deposition of silicon quantum dots embedded silicon nitride film on plastic substrate by catalytic CVD

K. M. Lee, T. H. Kim, J. D. Hwang, S. H. Jang, K. Y. Jeong, M. S. Han, W. S. Hong

Research output: Contribution to conferencePaperpeer-review

Abstract

We fabricated silicon quantum dots embedded in silicon nitride film using catalytic chemical vapor deposition process at a low temperature. Formation and size of silicon quantum dots in silicon nitride film were analyzed by photoluminescence (PL) spectroscopy. The peaks at 1.75 eV in PL spectra were observed in high H2-dilution sample. Silicon quantum dots of 5 nm in this sample were confirmed by transmission electron microscopy.

Original languageEnglish
Pages939-940
Number of pages2
StatePublished - 2008
Event15th International Display Workshops, IDW '08 - Niigata, Japan
Duration: 3 Dec 20085 Dec 2008

Conference

Conference15th International Display Workshops, IDW '08
Country/TerritoryJapan
CityNiigata
Period3/12/085/12/08

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