Abstract
We fabricated silicon quantum dots embedded in silicon nitride film using catalytic chemical vapor deposition process at a low temperature. Formation and size of silicon quantum dots in silicon nitride film were analyzed by photoluminescence (PL) spectroscopy. The peaks at 1.75 eV in PL spectra were observed in high H2-dilution sample. Silicon quantum dots of 5 nm in this sample were confirmed by transmission electron microscopy.
Original language | English |
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Pages | 939-940 |
Number of pages | 2 |
State | Published - 2008 |
Event | 15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 3 Dec 2008 → 5 Dec 2008 |
Conference
Conference | 15th International Display Workshops, IDW '08 |
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Country/Territory | Japan |
City | Niigata |
Period | 3/12/08 → 5/12/08 |