Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Bing Wang, Cong Wang, David A. Kohen, Riko I. Made, Kenneth Eng Kian Lee, Taewan Kim, Tim Milakovich, Eugene A. Fitzgerald, Soon Fatt Yoon, Jurgen Michel

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×107/cm2 to 1.2×105/cm2. The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.

Original languageEnglish
Pages (from-to)78-83
Number of pages6
JournalJournal of Crystal Growth
StatePublished - 1 May 2016


  • A3. Metalorganic vapor phase epitaxy
  • B2. Semiconducting III-V materials
  • B2. Semiconducting gallium compounds
  • B2. Semiconducting silicon compounds
  • B3. Light emitting diodes


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