Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Bing Wang; Cong Wang; David A. Kohen; Riko I. Made; Kenneth Eng Kian Lee; Taewan Kim; Tim Milakovich; Eugene A. Fitzgerald; Soon Fatt Yoon; Jurgen Michel

doi:10.1016/j.jcrysgro.2016.02.011

Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Bing Wang, Cong Wang, David A. Kohen, Riko I. Made, Kenneth Eng Kian Lee, Taewan Kim, Tim Milakovich, Eugene A. Fitzgerald, Soon Fatt Yoon, Jurgen Michel

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH₃ pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×10⁷/cm² to 1.2×10⁵/cm². The physics is suggested to be an optimization between complete As-termination and AsH₃ etching effect of SiGe surface.

Original language	English
Pages (from-to)	78-83
Number of pages	6
Journal	Journal of Crystal Growth
Volume	441
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.02.011
State	Published - 1 May 2016

Keywords

A3. Metalorganic vapor phase epitaxy
B2. Semiconducting III-V materials
B2. Semiconducting gallium compounds
B2. Semiconducting silicon compounds
B3. Light emitting diodes

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10.1016/j.jcrysgro.2016.02.011

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title = "Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe",

abstract = "GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×107/cm2 to 1.2×105/cm2. The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.",

keywords = "A3. Metalorganic vapor phase epitaxy, B2. Semiconducting III-V materials, B2. Semiconducting gallium compounds, B2. Semiconducting silicon compounds, B3. Light emitting diodes",

author = "Bing Wang and Cong Wang and Kohen, {David A.} and Made, {Riko I.} and Lee, {Kenneth Eng Kian} and Taewan Kim and Tim Milakovich and Fitzgerald, {Eugene A.} and Yoon, {Soon Fatt} and Jurgen Michel",

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day = "1",

doi = "10.1016/j.jcrysgro.2016.02.011",

language = "English",

volume = "441",

pages = "78--83",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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T1 - Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

AU - Wang, Bing

AU - Wang, Cong

AU - Kohen, David A.

AU - Made, Riko I.

AU - Lee, Kenneth Eng Kian

AU - Kim, Taewan

AU - Milakovich, Tim

AU - Fitzgerald, Eugene A.

AU - Yoon, Soon Fatt

AU - Michel, Jurgen

PY - 2016/5/1

Y1 - 2016/5/1

N2 - GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×107/cm2 to 1.2×105/cm2. The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.

AB - GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×107/cm2 to 1.2×105/cm2. The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.

KW - A3. Metalorganic vapor phase epitaxy

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting gallium compounds

KW - B2. Semiconducting silicon compounds

KW - B3. Light emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=84959167727&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.02.011

DO - 10.1016/j.jcrysgro.2016.02.011

M3 - Article

AN - SCOPUS:84959167727

SN - 0022-0248

VL - 441

SP - 78

EP - 83

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Abstract

Keywords

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