Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Bing Wang; Cong Wang; David A. Kohen; Riko I. Made; Kenneth Eng Kian Lee; Taewan Kim; Tim Milakovich; Eugene A. Fitzgerald; Soon Fatt Yoon; Jurgen Michel

doi:10.1016/j.jcrysgro.2016.02.011

Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Bing Wang
, Cong Wang
, David A. Kohen
, Riko I. Made
, Kenneth Eng Kian Lee
, Taewan Kim
, Tim Milakovich
, Eugene A. Fitzgerald
, Soon Fatt Yoon
, Jurgen Michel

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH₃ pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×10⁷/cm² to 1.2×10⁵/cm². The physics is suggested to be an optimization between complete As-termination and AsH₃ etching effect of SiGe surface.

Original language	English
Pages (from-to)	78-83
Number of pages	6
Journal	Journal of Crystal Growth
Volume	441
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.02.011
State	Published - 1 May 2016

Keywords

A3. Metalorganic vapor phase epitaxy
B2. Semiconducting III-V materials
B2. Semiconducting gallium compounds
B2. Semiconducting silicon compounds
B3. Light emitting diodes

Access to Document

10.1016/j.jcrysgro.2016.02.011

Cite this

@article{43fbe83221c549d7ac8b496bdbc02337,

title = "Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe",

abstract = "GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×107/cm2 to 1.2×105/cm2. The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.",

keywords = "A3. Metalorganic vapor phase epitaxy, B2. Semiconducting III-V materials, B2. Semiconducting gallium compounds, B2. Semiconducting silicon compounds, B3. Light emitting diodes",

author = "Bing Wang and Cong Wang and Kohen, \{David A.\} and Made, \{Riko I.\} and Lee, \{Kenneth Eng Kian\} and Taewan Kim and Tim Milakovich and Fitzgerald, \{Eugene A.\} and Yoon, \{Soon Fatt\} and Jurgen Michel",

year = "2016",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2016.02.011",

language = "English",

volume = "441",

pages = "78--83",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

AU - Wang, Bing

AU - Wang, Cong

AU - Kohen, David A.

AU - Made, Riko I.

AU - Lee, Kenneth Eng Kian

AU - Kim, Taewan

AU - Milakovich, Tim

AU - Fitzgerald, Eugene A.

AU - Yoon, Soon Fatt

AU - Michel, Jurgen

PY - 2016/5/1

Y1 - 2016/5/1

N2 - GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×107/cm2 to 1.2×105/cm2. The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.

AB - GaAsP has important applications for solar cells and light-emitting diodes on silicon substrates. Here we demonstrate that GaAsP can be directly grown by metal-organic chemical vapor deposition on previously-prepared lattice-matched SiGe virtual substrates, without prior in-situ growth of SiGe. By optimizing the growth pressure and AsH3 pre-exposure time, the surface morphology of GaAsP is improved and the pinhole densities are reduced by two orders of magnitude from 2.4×107/cm2 to 1.2×105/cm2. The physics is suggested to be an optimization between complete As-termination and AsH3 etching effect of SiGe surface.

KW - A3. Metalorganic vapor phase epitaxy

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting gallium compounds

KW - B2. Semiconducting silicon compounds

KW - B3. Light emitting diodes

UR - https://www.scopus.com/pages/publications/84959167727

U2 - 10.1016/j.jcrysgro.2016.02.011

DO - 10.1016/j.jcrysgro.2016.02.011

M3 - Article

AN - SCOPUS:84959167727

SN - 0022-0248

VL - 441

SP - 78

EP - 83

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this