Abstract
Revealing growth mechanism of a thin film and properties of its film-substrate interface necessarily require microscopic investigations on the initial growth stages in temperature- and thickness-resolved manners. Here we applied in situ scanning tunneling microscopy and atomic force microscopy to investigate the growth dynamics in homo- (SrTiO3) and hetero- (SrRuO3) epitaxies on SrTiO3(001). A comparison of temperature-dependent surface structures of SrRuO3 and SrTiO3 films suggests that the peculiar growth mode switching from a "layer-by-layer" to "step-flow" type in a SrRuO3 films arises from a reduction of surface migration barrier, caused by the change in the chemical configuration of the interface between the topmost and underlying layers. Island densities in perovskite epitaxies exhibited a clear linear inverse-temperature dependence. A prototypical study on island nucleation stage of SrTiO3 homoepitaxy revealed that classical diffusion model is valid for the perovskite growths.
Original language | English |
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Pages (from-to) | 5383-5390 |
Number of pages | 8 |
Journal | ACS Nano |
Volume | 10 |
Issue number | 5 |
DOIs | |
State | Published - 24 May 2016 |
Keywords
- SrTiO
- growth mode
- island nucleation
- perovskite
- scanning tunneling microscopy