TY - JOUR
T1 - Diverse Metal Ion Polyelectrolytes as Hole Transport Layers for Quasi-2D Perovskite Light-Emitting Diodes
AU - Shoukat, Faiza
AU - Lee, Seongbeom
AU - Lee, Jin Hee
AU - Khan, Yeasin
AU - Walker, Bright
AU - Park, Sung Heum
AU - Seo, Jung Hwa
N1 - Publisher Copyright:
© 2025 Wiley-VCH GmbH.
PY - 2025/6/5
Y1 - 2025/6/5
N2 - This work investigates the role of metal ion-doped (Cs+, Ni2+, and Cu2+) PEDOT:PSS films as hole transport layers (HTLs) in quasi-2D perovskite light-emitting diodes (PeLEDs). These HTLs lead to enhanced device performance through reduced defect density, improved hole mobility, and prolonged photoluminescence lifetime. X-ray diffraction (XRD) reveals structural modifications in CsPbBr3 films, with enhanced crystallinity resulting from the elimination of excess long-chain cations. Morphological analyses using scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrate the influence of metal doping on surface coverage and nanoscale roughness. Time-resolved photoluminescence (TR-PL) analysis confirms reduced nonradiative recombination, supporting improved film quality. Devices with Ni:PEDOT:PSS exhibit the highest external quantum efficiency, while Cs:PEDOT:PSS and Cu:PEDOT:PSS offer enhanced stability, achieving significantly longer operational lifetimes. These findings highlight the potential of metal-doped PEDOT:PSS in optimizing the structural, optical, and electrical properties of perovskite materials, paving the way for more stable and efficient PeLEDs.
AB - This work investigates the role of metal ion-doped (Cs+, Ni2+, and Cu2+) PEDOT:PSS films as hole transport layers (HTLs) in quasi-2D perovskite light-emitting diodes (PeLEDs). These HTLs lead to enhanced device performance through reduced defect density, improved hole mobility, and prolonged photoluminescence lifetime. X-ray diffraction (XRD) reveals structural modifications in CsPbBr3 films, with enhanced crystallinity resulting from the elimination of excess long-chain cations. Morphological analyses using scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrate the influence of metal doping on surface coverage and nanoscale roughness. Time-resolved photoluminescence (TR-PL) analysis confirms reduced nonradiative recombination, supporting improved film quality. Devices with Ni:PEDOT:PSS exhibit the highest external quantum efficiency, while Cs:PEDOT:PSS and Cu:PEDOT:PSS offer enhanced stability, achieving significantly longer operational lifetimes. These findings highlight the potential of metal-doped PEDOT:PSS in optimizing the structural, optical, and electrical properties of perovskite materials, paving the way for more stable and efficient PeLEDs.
KW - crystallinity of perovskite films
KW - defect densities
KW - diverse metal ion polyelectrolytes
KW - highly efficient quasi-2D perovskite light-emitting diodes
UR - https://www.scopus.com/pages/publications/85219665063
U2 - 10.1002/admt.202401684
DO - 10.1002/admt.202401684
M3 - Article
AN - SCOPUS:85219665063
SN - 2365-709X
VL - 10
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
IS - 11
M1 - 2401684
ER -