Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system

Chaeun Kim; Yunseok Lee; Sunghun Kim; Myounggon Kang; Sungjun Kim

doi:10.1016/j.mssp.2023.107314

Diverse synaptic weight adjustment of bio-inspired ZrO_x-based memristors for neuromorphic system

Chaeun Kim, Yunseok Lee, Sunghun Kim, Myounggon Kang, Sungjun Kim

School of Advanced Fusion Studies

Dongguk University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrO_x/Pt capacitor structure for neuromorphic engineering. The chemical and material compositions and the thicknesses of each of the layers are verified by using transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) maps. Stable resistive switching with a low set voltage (∼1 V) was determined by scanning the DC I–V curves of many cells. The DC endurance of ∼10⁴ cycles and retention (10,000 s) in five states was achieved. Multi-level cells (MLC) characteristics were achieved based on the compliance current and reset stop voltage in DC sweep and pulses. Finally, we emulated paired-pulse facilitation (PPF), paired-pulse depression (PPD), electric excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) of the artificial synapse by using the RRAM device.

Original language	English
Article number	107314
Journal	Materials Science in Semiconductor Processing
Volume	157
DOIs	https://doi.org/10.1016/j.mssp.2023.107314
State	Published - Apr 2023

Keywords

AI semiconductor
Memristor
Neural network
Neuromorphic system
Resistive switching

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10.1016/j.mssp.2023.107314

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title = "Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system",

abstract = "In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrOx/Pt capacitor structure for neuromorphic engineering. The chemical and material compositions and the thicknesses of each of the layers are verified by using transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) maps. Stable resistive switching with a low set voltage (∼1 V) was determined by scanning the DC I–V curves of many cells. The DC endurance of ∼104 cycles and retention (10,000 s) in five states was achieved. Multi-level cells (MLC) characteristics were achieved based on the compliance current and reset stop voltage in DC sweep and pulses. Finally, we emulated paired-pulse facilitation (PPF), paired-pulse depression (PPD), electric excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) of the artificial synapse by using the RRAM device.",

keywords = "AI semiconductor, Memristor, Neural network, Neuromorphic system, Resistive switching",

author = "Chaeun Kim and Yunseok Lee and Sunghun Kim and Myounggon Kang and Sungjun Kim",

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doi = "10.1016/j.mssp.2023.107314",

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T1 - Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system

AU - Kim, Chaeun

AU - Lee, Yunseok

AU - Kim, Sunghun

AU - Kang, Myounggon

AU - Kim, Sungjun

PY - 2023/4

Y1 - 2023/4

N2 - In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrOx/Pt capacitor structure for neuromorphic engineering. The chemical and material compositions and the thicknesses of each of the layers are verified by using transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) maps. Stable resistive switching with a low set voltage (∼1 V) was determined by scanning the DC I–V curves of many cells. The DC endurance of ∼104 cycles and retention (10,000 s) in five states was achieved. Multi-level cells (MLC) characteristics were achieved based on the compliance current and reset stop voltage in DC sweep and pulses. Finally, we emulated paired-pulse facilitation (PPF), paired-pulse depression (PPD), electric excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) of the artificial synapse by using the RRAM device.

AB - In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrOx/Pt capacitor structure for neuromorphic engineering. The chemical and material compositions and the thicknesses of each of the layers are verified by using transmission electron microscopy (TEM) images and energy-dispersive X-ray spectroscopy (EDS) maps. Stable resistive switching with a low set voltage (∼1 V) was determined by scanning the DC I–V curves of many cells. The DC endurance of ∼104 cycles and retention (10,000 s) in five states was achieved. Multi-level cells (MLC) characteristics were achieved based on the compliance current and reset stop voltage in DC sweep and pulses. Finally, we emulated paired-pulse facilitation (PPF), paired-pulse depression (PPD), electric excitatory postsynaptic current (EPSC), and spike-timing-dependent plasticity (STDP) of the artificial synapse by using the RRAM device.

KW - AI semiconductor

KW - Memristor

KW - Neural network

KW - Neuromorphic system

KW - Resistive switching

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M1 - 107314

ER -

Diverse synaptic weight adjustment of bio-inspired ZrO_x-based memristors for neuromorphic system

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Keywords

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