Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3

Jeong Hoon Lee; Kyu Hyoung Lee; Sung Wng Kim; Sang Il Kim; Soon Mok Choi; Jong Young Kim; Se Yun Kim; Jong Wook Roh; Hee Jung Park

doi:10.1016/j.physb.2017.05.007

Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu_0.008Bi₂Te_2.7Se_0.3

Jeong Hoon Lee, Kyu Hyoung Lee, Sung Wng Kim, Sang Il Kim, Soon Mok Choi, Jong Young Kim, Se Yun Kim, Jong Wook Roh, Hee Jung Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu_0.008Bi₂Te_2.7Se_0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu_0.008Bi₂Te_2.7Se_0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu_0.008Bi₂Te_2.7Se_0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu_0.008Bi₂Te_2.7Se_0.3 (Cu_0.008Bi_1.98V_0.02Te_2.7Se_0.3).

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	517
DOIs	https://doi.org/10.1016/j.physb.2017.05.007
State	Published - 15 Jul 2017

Keywords

BiTeSe
Doping
Lattice thermal conductivity
Power factor
Thermoelectric

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10.1016/j.physb.2017.05.007

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@article{eaddaff84e76455786f9cf378539077e,

title = "Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3",

abstract = "Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).",

keywords = "BiTeSe, Doping, Lattice thermal conductivity, Power factor, Thermoelectric",

author = "Lee, {Jeong Hoon} and Lee, {Kyu Hyoung} and Kim, {Sung Wng} and Kim, {Sang Il} and Choi, {Soon Mok} and Kim, {Jong Young} and Kim, {Se Yun} and Roh, {Jong Wook} and Park, {Hee Jung}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = jul,

day = "15",

doi = "10.1016/j.physb.2017.05.007",

language = "English",

volume = "517",

pages = "1--5",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3

AU - Lee, Jeong Hoon

AU - Lee, Kyu Hyoung

AU - Kim, Sung Wng

AU - Kim, Sang Il

AU - Choi, Soon Mok

AU - Kim, Jong Young

AU - Kim, Se Yun

AU - Roh, Jong Wook

AU - Park, Hee Jung

PY - 2017/7/15

Y1 - 2017/7/15

N2 - Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).

AB - Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300 K was obtained in 1 at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).

KW - BiTeSe

KW - Doping

KW - Lattice thermal conductivity

KW - Power factor

KW - Thermoelectric

UR - http://www.scopus.com/inward/record.url?scp=85018429687&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2017.05.007

DO - 10.1016/j.physb.2017.05.007

M3 - Article

AN - SCOPUS:85018429687

SN - 0921-4526

VL - 517

SP - 1

EP - 5

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu_0.008Bi₂Te_2.7Se_0.3

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Keywords

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