Doping effect of solution-processed thin-film transistors based on polyfluorene

Eunhee Lim, Byung Jun Jung, Masayuki Chikamatsu, Reiko Azumi, Yuji Yoshida, Kiyoshi Yase, Lee Mi Do, Hong Ku Shim

Research output: Contribution to journalArticlepeer-review

68 Scopus citations


We report the fabrication of solution-processable organic thin-film transistors (OTFTs) based on poly(9,9′-dioctylfluorene-alt-bithiophene) (F8T2) doped with an electron-acceptor, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4TCNQ). The 8% doping of the F8T2 film was found to result in an increased hole mobility, up to 0.01 cm2 V -1 s-1, and in an improved on/off ratio, as well as in a low off-current, of the order of 10-11 A. The doped F8T2 device was also found to exhibit a better threshold voltage and reduced hysteresis behavior. These improvements in performance are attributed to the formation of the F8T2-F4TCNQ complex, which results in better hole injection and improved device stability.

Original languageEnglish
Pages (from-to)1416-1420
Number of pages5
JournalJournal of Materials Chemistry
Issue number14
StatePublished - 2007


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