TY - JOUR
T1 - Doping effect of solution-processed thin-film transistors based on polyfluorene
AU - Lim, Eunhee
AU - Jung, Byung Jun
AU - Chikamatsu, Masayuki
AU - Azumi, Reiko
AU - Yoshida, Yuji
AU - Yase, Kiyoshi
AU - Do, Lee Mi
AU - Shim, Hong Ku
PY - 2007
Y1 - 2007
N2 - We report the fabrication of solution-processable organic thin-film transistors (OTFTs) based on poly(9,9′-dioctylfluorene-alt-bithiophene) (F8T2) doped with an electron-acceptor, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4TCNQ). The 8% doping of the F8T2 film was found to result in an increased hole mobility, up to 0.01 cm2 V -1 s-1, and in an improved on/off ratio, as well as in a low off-current, of the order of 10-11 A. The doped F8T2 device was also found to exhibit a better threshold voltage and reduced hysteresis behavior. These improvements in performance are attributed to the formation of the F8T2-F4TCNQ complex, which results in better hole injection and improved device stability.
AB - We report the fabrication of solution-processable organic thin-film transistors (OTFTs) based on poly(9,9′-dioctylfluorene-alt-bithiophene) (F8T2) doped with an electron-acceptor, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane (F4TCNQ). The 8% doping of the F8T2 film was found to result in an increased hole mobility, up to 0.01 cm2 V -1 s-1, and in an improved on/off ratio, as well as in a low off-current, of the order of 10-11 A. The doped F8T2 device was also found to exhibit a better threshold voltage and reduced hysteresis behavior. These improvements in performance are attributed to the formation of the F8T2-F4TCNQ complex, which results in better hole injection and improved device stability.
UR - http://www.scopus.com/inward/record.url?scp=33947674841&partnerID=8YFLogxK
U2 - 10.1039/b615720c
DO - 10.1039/b615720c
M3 - Article
AN - SCOPUS:33947674841
SN - 0959-9428
VL - 17
SP - 1416
EP - 1420
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
IS - 14
ER -