Down-Coupling Phenomenon of Floating Channel in 3D NAND Flash Memory

Yoon Kim, Myounggon Kang

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

In this letter, we have investigated the down-coupling phenomenon (DCP) of inhibited channel potential in 3D NAND flash memory. The inhibited channel in the 3D NAND flash structure can easily be in the floating state, because its channel is not directly connected to its body. This floating channel behavior can adversely affect memory operation. Specifically, during program and verify operation, the DCP reduces the boosting potential of the inhibit string. Consequently, the insufficient channel potential leads to a large program disturbance and deterioration of the cell-distribution characteristics. Using computer-aided design simulations, we analyzed this phenomenon and proposed an operation method to alleviate this phenomenon.

Original languageEnglish
Article number7604126
Pages (from-to)1566-1569
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number12
DOIs
StatePublished - Dec 2016

Keywords

  • 3D NAND flash memory
  • channel potential
  • down-coupling phenomenon (DCP)
  • program inhibit string

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