Down-Coupling Phenomenon of Floating Channel in 3D NAND Flash Memory

Yoon Kim; Myounggon Kang

doi:10.1109/LED.2016.2619903

Down-Coupling Phenomenon of Floating Channel in 3D NAND Flash Memory

Yoon Kim, Myounggon Kang

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

In this letter, we have investigated the down-coupling phenomenon (DCP) of inhibited channel potential in 3D NAND flash memory. The inhibited channel in the 3D NAND flash structure can easily be in the floating state, because its channel is not directly connected to its body. This floating channel behavior can adversely affect memory operation. Specifically, during program and verify operation, the DCP reduces the boosting potential of the inhibit string. Consequently, the insufficient channel potential leads to a large program disturbance and deterioration of the cell-distribution characteristics. Using computer-aided design simulations, we analyzed this phenomenon and proposed an operation method to alleviate this phenomenon.

Original language	English
Article number	7604126
Pages (from-to)	1566-1569
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/LED.2016.2619903
State	Published - Dec 2016

Keywords

3D NAND flash memory
channel potential
down-coupling phenomenon (DCP)
program inhibit string

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10.1109/LED.2016.2619903

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title = "Down-Coupling Phenomenon of Floating Channel in 3D NAND Flash Memory",

abstract = "In this letter, we have investigated the down-coupling phenomenon (DCP) of inhibited channel potential in 3D NAND flash memory. The inhibited channel in the 3D NAND flash structure can easily be in the floating state, because its channel is not directly connected to its body. This floating channel behavior can adversely affect memory operation. Specifically, during program and verify operation, the DCP reduces the boosting potential of the inhibit string. Consequently, the insufficient channel potential leads to a large program disturbance and deterioration of the cell-distribution characteristics. Using computer-aided design simulations, we analyzed this phenomenon and proposed an operation method to alleviate this phenomenon.",

keywords = "3D NAND flash memory, channel potential, down-coupling phenomenon (DCP), program inhibit string",

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N2 - In this letter, we have investigated the down-coupling phenomenon (DCP) of inhibited channel potential in 3D NAND flash memory. The inhibited channel in the 3D NAND flash structure can easily be in the floating state, because its channel is not directly connected to its body. This floating channel behavior can adversely affect memory operation. Specifically, during program and verify operation, the DCP reduces the boosting potential of the inhibit string. Consequently, the insufficient channel potential leads to a large program disturbance and deterioration of the cell-distribution characteristics. Using computer-aided design simulations, we analyzed this phenomenon and proposed an operation method to alleviate this phenomenon.

AB - In this letter, we have investigated the down-coupling phenomenon (DCP) of inhibited channel potential in 3D NAND flash memory. The inhibited channel in the 3D NAND flash structure can easily be in the floating state, because its channel is not directly connected to its body. This floating channel behavior can adversely affect memory operation. Specifically, during program and verify operation, the DCP reduces the boosting potential of the inhibit string. Consequently, the insufficient channel potential leads to a large program disturbance and deterioration of the cell-distribution characteristics. Using computer-aided design simulations, we analyzed this phenomenon and proposed an operation method to alleviate this phenomenon.

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KW - channel potential

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KW - program inhibit string

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Down-Coupling Phenomenon of Floating Channel in 3D NAND Flash Memory

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