@inproceedings{ef31ea8ca49e44deb3a005be5fb7fdf4,
title = "Dual MOSFET hydrogen sensors with thermal island structure",
abstract = "A low powered hydrogen gas sensor of the FET (field-effect transistor) structure was designed, fabricated and characterized for self compensation to outer environments. The dual-gate FET hydrogen sensor was integrated with a micro-heater and two Pt-gate FETs; a sensing device for hydrogen detection, and a reference device as an electrical compensator. The identical output between the sensitive-FET and reference-FET was stable at temperatures ranging from room temperature to 250°C due to the same temperature dependence of the current-voltage (I-V) characteristics. The Pt-FET sensor showed stable responses to hydrogen at a range of operation temperatures. The optimal point in the micro-heater operation for 5,000 ppm H2 gas injection was approximately 150°C. The highest sensitivity was 0.112 mA, and the response and recovery times were 18 sec and 19 sec, respectively. The low-power MOSFET gas sensor was found to be suitable for applications in portable gas monitoring units and automobiles.",
keywords = "Bulk micromachining, Gas sensor, Hydrogen, Low power, MOSFET",
author = "Kim, {Bum Joon} and Kim, {Jung Sik}",
year = "2013",
doi = "10.4028/www.scientific.net/KEM.543.93",
language = "English",
isbn = "9783037856161",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd.",
pages = "93--96",
booktitle = "Materials and Applications for Sensors and Transducers II",
address = "Switzerland",
note = "2nd International Conference on Materials and Applications for Sensors and Transducers, IC-MAST 2012 ; Conference date: 24-05-2012 Through 28-05-2012",
}