@inproceedings{5a438a750e2c43a287a7824572ab2b23,
title = "Effect of atomic hydrogen in SiN x films for gate dielectric of silicon-based TFTs fabricated at a low-temperature(≤150 °C) by Cat-CVD",
abstract = "We studied the effect of in-situ hydrogen annealing on dielectric SiNx films at a low-temperature (150°C) by Cat-CVD. The in-situ hydrogen annealing was performed without a vacuum breaking. After in-situ annealing, furnace annealing was performed for 2hours below 150°C. The C-V, and I-V characteristics were measured by MIS structure. The high hydrogen ratio sample showed better dielectric properties improvement by annealing. SiNx films dielectric properties were extremely improved by insitu hydrogen annealing and furnace annealing. Breakdown field was 6 MV/cm. C-V hysteresis window was reduced from 15 V to 1 V. The on/off ratio of TFT was 105. The Mobility was 0.23. We successfully fabricated dielectric SiNx films at the low temperature, and also a-Si TFTs at the same temperature by Cat-CVD.",
author = "Keum, {Ki Su} and Lee, {Kyoung Min} and Hwang, {Jae Dam} and No, {Kil Sun} and Hong, {Wan Shick}",
year = "2011",
doi = "10.1149/1.3647857",
language = "English",
isbn = "9781607682912",
series = "ECS Transactions",
number = "31",
pages = "73--76",
booktitle = "Student Posters (General) - 219th ECS Meeting",
edition = "31",
note = "General Student Poster Session - 219th ECS Meeting ; Conference date: 01-05-2011 Through 06-05-2011",
}