@inproceedings{b8dc11dbb0d6401fa5a1e67baa8493fa,
title = "Effect of atomic in-situ hydrogen annealing for gate dielectric cat-CVD silicon nitride films on flexible substrate at temperature below 200 °C",
abstract = "We fabricated silicon-based bottom gate thin film transistors (TFTs) at low temperature (≤ 200 °C) by catalytic chemical vapor deposition (Cat-CVD) system. Tri-layer, silicon nitride (SiNx), nano-crystalline silicon (nc-Si), and n+-silicon (n+-Si), of TFTs were deposited continuously without vacuum breaking. To improve an on/off ratio of TFTs, we attempted to in-situ annealing on SiNx gate dielectric layer at atomic hydrogen (H2) atmosphere. The in-situ H2 annealing was performed before deposition nc-Si channel layer. As a result, we achieve the on/off ratio more than 105.",
keywords = "Annealing, Dielectric, Flexible, Silicon nitride",
author = "Keum, {Ki Su} and Lee, {Kyoung Min} and Hwang, {Jae Dam} and Lee, {Youn Jin} and No, {Kil Sun} and Hong, {Wan Shick}",
year = "2010",
language = "English",
isbn = "9781617827020",
series = "Proceedings of International Meeting on Information Display",
pages = "502--503",
booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",
note = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",
}