Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures

Seoung Hwan Park; Doyeol Ahn

doi:10.7567/APEX.9.021001

Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The effect of boron incorporation on the light emission characteristics of UV B_xAl_yGa_1-x-yN/AlN quantum well (QW) structures was investigated. The internal field rapidly decreases with increasing boron composition and becomes zero at critical boron compositions. As a result, the light intensity of the BAlGaN/AlN QW structure is increased by roughly four times at the critical boron composition of x = 0.03 and y = 0.2. Therefore, in the range of Al composition below 0.7, we expect that UV BAlGaN/AlN QW structures can be used as a high-efficiency light source with a strain reduction of 20-30-, relative to conventional AlGaN/AlN QW structures.

Original language	English
Article number	021001
Journal	Applied Physics Express
Volume	9
Issue number	2
DOIs	https://doi.org/10.7567/APEX.9.021001
State	Published - Feb 2016

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title = "Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures",

abstract = "The effect of boron incorporation on the light emission characteristics of UV BxAlyGa1-x-yN/AlN quantum well (QW) structures was investigated. The internal field rapidly decreases with increasing boron composition and becomes zero at critical boron compositions. As a result, the light intensity of the BAlGaN/AlN QW structure is increased by roughly four times at the critical boron composition of x = 0.03 and y = 0.2. Therefore, in the range of Al composition below 0.7, we expect that UV BAlGaN/AlN QW structures can be used as a high-efficiency light source with a strain reduction of 20-30-, relative to conventional AlGaN/AlN QW structures.",

author = "Park, {Seoung Hwan} and Doyeol Ahn",

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doi = "10.7567/APEX.9.021001",

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AU - Park, Seoung Hwan

AU - Ahn, Doyeol

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N2 - The effect of boron incorporation on the light emission characteristics of UV BxAlyGa1-x-yN/AlN quantum well (QW) structures was investigated. The internal field rapidly decreases with increasing boron composition and becomes zero at critical boron compositions. As a result, the light intensity of the BAlGaN/AlN QW structure is increased by roughly four times at the critical boron composition of x = 0.03 and y = 0.2. Therefore, in the range of Al composition below 0.7, we expect that UV BAlGaN/AlN QW structures can be used as a high-efficiency light source with a strain reduction of 20-30-, relative to conventional AlGaN/AlN QW structures.

AB - The effect of boron incorporation on the light emission characteristics of UV BxAlyGa1-x-yN/AlN quantum well (QW) structures was investigated. The internal field rapidly decreases with increasing boron composition and becomes zero at critical boron compositions. As a result, the light intensity of the BAlGaN/AlN QW structure is increased by roughly four times at the critical boron composition of x = 0.03 and y = 0.2. Therefore, in the range of Al composition below 0.7, we expect that UV BAlGaN/AlN QW structures can be used as a high-efficiency light source with a strain reduction of 20-30-, relative to conventional AlGaN/AlN QW structures.

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VL - 9

JO - Applied Physics Express

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ER -

Effect of boron incorporation on light emission characteristics of UV BAlGaN/AlN quantum well structures

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