Effect of Current Density and Plating Time on Cu Electroplating in TSV and Low Alpha Solder Bumping

Do Hyun Jung, Ashutosh Sharma, Keong Heum Kim, Yong Chul Choo, Jae Pil Jung

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


In this study, copper filling in through-silicon via (TSV) by pulse periodic reverse electroplating and low alpha solder bumping on Cu-filled TSVs was investigated. The via diameter and depth of TSV were 60 and 120 µm, respectively. The experimental results indicated that the thickness of electrodeposited copper layer increased with increasing cathodic current density and plating time. The electroplated Cu in TSV showed a typical bottom-up filling. A defectless, complete, and fast 100% Cu-filled TSV was achieved at cathodic and anodic current densities of −8 and 16 mA/cm2 for a plating time of 4 h, respectively. A sound low alpha solder ball, Sn-1.0 wt.% Ag-0.5 wt.% Cu (SAC 105) with a diameter of 83 µm and height of 66 µm was reflow processed at 245 °C on Cu-filled TSV. The Cu/solder joint interface was subjected to high temperature aging at 85 °C for 150 h, which showed an excellent bonding characteristic with minimum Cu-Sn intermetallic compounds growth.

Original languageEnglish
Pages (from-to)1107-1115
Number of pages9
JournalJournal of Materials Engineering and Performance
Issue number3
StatePublished - Mar 2015


  • bonding
  • deposition
  • electronic materials
  • microstructure
  • scanning electron microscopy (SEM)
  • through-silicon via (TSV)


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