Effect of in-situ hydrogen annealing on dielectric property of a low temperature silicon nitride layer in a bottom-gate nanocrystalline silicon TFT by catalytic CVD

The dielectric property has great influence on characteristics of bottom-gate nanocrystalline silicon thin film transistor at low process temperature (≤ 200°C). For improving the quality of the gate dielectric layer, in-situ hydrogen annealing step in the silicon nitride deposition process was attempted in low process temperature by catalytic CVD system. The in-situ hydrogen annealing was effective in advanced field effect mobility and capacitance-voltage characteristic by decreasing the defects inside the SiN _x film.