Effect of in-situ hydrogen annealing on dielectric property of a low temperature silicon nitride layer in a bottom-gate nanocrystalline silicon TFT by catalytic CVD

Youn Jin Lee, Kyoung Min Lee, Jae Dam Hwang, Kil Sun No, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The dielectric property has great influence on characteristics of bottom-gate nanocrystalline silicon thin film transistor at low process temperature (≤ 200°C). For improving the quality of the gate dielectric layer, in-situ hydrogen annealing step in the silicon nitride deposition process was attempted in low process temperature by catalytic CVD system. The in-situ hydrogen annealing was effective in advanced field effect mobility and capacitance-voltage characteristic by decreasing the defects inside the SiN x film.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
PublisherElectrochemical Society Inc.
Pages395-399
Number of pages5
Edition1
ISBN (Electronic)9781607681410
ISBN (Print)9781566777919
DOIs
StatePublished - 2010

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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