@inproceedings{bd6f42d88c1c4376b6d509aea257d0df,
title = "Effect of in-situ hydrogen annealing on dielectric property of a low temperature silicon nitride layer in a bottom-gate nanocrystalline silicon TFT by catalytic CVD",
abstract = "The dielectric property has great influence on characteristics of bottom-gate nanocrystalline silicon thin film transistor at low process temperature (≤ 200°C). For improving the quality of the gate dielectric layer, in-situ hydrogen annealing step in the silicon nitride deposition process was attempted in low process temperature by catalytic CVD system. The in-situ hydrogen annealing was effective in advanced field effect mobility and capacitance-voltage characteristic by decreasing the defects inside the SiN x film.",
author = "Lee, {Youn Jin} and Lee, {Kyoung Min} and Hwang, {Jae Dam} and No, {Kil Sun} and Hong, {Wan Shick}",
year = "2010",
doi = "10.1149/1.3375626",
language = "English",
isbn = "9781566777919",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "395--399",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6",
address = "United States",
edition = "1",
}