Effect of inductively coupled plasma oxidation on properties of magnetic tunnel junctions

Ohsung Song; Y. M. Lee; C. S. Yoon; C. K. Kim

doi:10.1063/1.1529095

Effect of inductively coupled plasma oxidation on properties of magnetic tunnel junctions

Ohsung Song, Y. M. Lee, C. S. Yoon, C. K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Effect of inductively coupled plasma (ICP) oxidation on properties of magnetic tunnel junction was studied. The retention of the magnetoresistance effect in spite of the prolonged oxidation duration was attributed to the dense amorphous AlO_x structure formed by the ICP process. It was observed that the junctions with a ICP oxidized tunnel barrier maintained the tunneling magnetoresistance ratio over 15%.

Original language	English
Pages (from-to)	1146-1149
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.1529095
State	Published - 15 Jan 2003

Access to Document

10.1063/1.1529095

Cite this

@article{44470045cb9645769763952e2c3636d1,

title = "Effect of inductively coupled plasma oxidation on properties of magnetic tunnel junctions",

abstract = "Effect of inductively coupled plasma (ICP) oxidation on properties of magnetic tunnel junction was studied. The retention of the magnetoresistance effect in spite of the prolonged oxidation duration was attributed to the dense amorphous AlOx structure formed by the ICP process. It was observed that the junctions with a ICP oxidized tunnel barrier maintained the tunneling magnetoresistance ratio over 15%.",

author = "Ohsung Song and Lee, {Y. M.} and Yoon, {C. S.} and Kim, {C. K.}",

year = "2003",

month = jan,

day = "15",

doi = "10.1063/1.1529095",

language = "English",

volume = "93",

pages = "1146--1149",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Effect of inductively coupled plasma oxidation on properties of magnetic tunnel junctions

AU - Song, Ohsung

AU - Lee, Y. M.

AU - Yoon, C. S.

AU - Kim, C. K.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - Effect of inductively coupled plasma (ICP) oxidation on properties of magnetic tunnel junction was studied. The retention of the magnetoresistance effect in spite of the prolonged oxidation duration was attributed to the dense amorphous AlOx structure formed by the ICP process. It was observed that the junctions with a ICP oxidized tunnel barrier maintained the tunneling magnetoresistance ratio over 15%.

AB - Effect of inductively coupled plasma (ICP) oxidation on properties of magnetic tunnel junction was studied. The retention of the magnetoresistance effect in spite of the prolonged oxidation duration was attributed to the dense amorphous AlOx structure formed by the ICP process. It was observed that the junctions with a ICP oxidized tunnel barrier maintained the tunneling magnetoresistance ratio over 15%.

UR - http://www.scopus.com/inward/record.url?scp=0037439468&partnerID=8YFLogxK

U2 - 10.1063/1.1529095

DO - 10.1063/1.1529095

M3 - Article

AN - SCOPUS:0037439468

SN - 0021-8979

VL - 93

SP - 1146

EP - 1149

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Effect of inductively coupled plasma oxidation on properties of magnetic tunnel junctions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this