Effect of Mo Vacancy on the Photoresponse of Bilayer MoS2 Film

Ju Won Kim, Sang Il Kim, Taewan Kim

Research output: Contribution to journalArticlepeer-review


Photodetectors that can detect light over a broad spectral range have attracted significant attention. Recently, molybdenum disulfide (MoS2 ), a known transition metal dichalcogenide, is considered a good photodetector material. In this study, MoS2 film was prepared by metal-organic chemical vapor deposition (MOCVD) on an SiO2 /Si substrate. The effect of Mo vacancies on the structural, electrical, and optical properties of MoS2 films was analyzed. Results show that the synthesized MoS2-based phototransistor exhibits a photoresponsivity as high as 125 A/W at 0.02 mW power density of the 850 nm laser at room temperature (300 K). The Mo vacancies were confirmed in the MoS2 bilayer through XPS measurements. MOCVD-grown bilayer MoS2-based phototransistors with Mo vacancies allowed the detection of a wider wavelength range of 400–1150 nm. Thus, introducing Mo vacancies improved the optoelectronic properties of MoS2 phototransistors.

Original languageEnglish
Pages (from-to)107-109
Number of pages3
JournalApplied Science and Convergence Technology
Issue number5
StatePublished - 1 Sep 2022


  • 2D Transition metal dichalcogenides
  • Mo vacancy
  • MoS
  • Photoresponsivity
  • Phototransistor


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