Effect of nitridation pretreatment on the electrical properties of low-temperature (100°C) silicon nitride films

Se Myoung Noh, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Nitridation pretreatment with a mixture of NHa and N2 has been attempted to improve electrical properties of silicon nitride films deposited at 100°C. The nitridation process for 1 minute at the substrate temperature of 50"C reduced drastically the capacitance-voltage hysteresis window and the threshold voltage shift.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages1080-1081
Number of pages2
ISBN (Electronic)9781510845510
StatePublished - 2016
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 7 Dec 20169 Dec 2016

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume2

Conference

Conference23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Country/TerritoryJapan
CityFukuoka
Period7/12/169/12/16

Keywords

  • Catalytic cvd
  • Electrical property
  • Low-temperature
  • Nitridation
  • Silicon nitride

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