Effect of photoresponsive polymer gate insulators on performance of poly(4-vinylphenol)-based organic phototransistors

This paper presents a comprehensive overview of how the photoresponse of crosslinked poly(4-vinylphenol) (c-PVP) influences the photosensitivity and photoresponsivity of organic phototransistors (OPTs) using four c-PVP layers with different optical energy gaps (E _g). The photoresponse of the c-PVP layers governed by the E _g is found to be a critical factor in enhancing the photosensivity and photoresponsivity of the PVP-based OPTs (P-OPTs). More specifically, the P-OPT based on a completely crosslinked insulator with a low E _g exhibits much higher photosensitivity and photoresponsivity than other P-OPTs that use a partially crosslinked gate insulating layers with relatively high E _g values. This physical approach to investigating the influence of photoresponsive gate insulators on OPTs' performance provides a useful starting-point when considering how best to build high-performance photosensing systems based on organic materials.