Effect of thermal shock on Cu extrusion of TSV for three-dimensional packaging

Myong Hoon Ron, Jun Hyeong Lee, Jae Pil Jung, Won Joong Kim

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Through-silicon-via (TSV) is a core technology that enables vertical stacking of several semiconductor chips for 3-demensional packaging. However, thermo-mechanical problems of the TSV technology, such as Cu extrusion, cracks between the Cu and Si substrate, and voids within Cu become important issues. In this study, Cu-filled TSV with a diameter of 30 μm and depth of 70 μm was fabricated by electroplating, and the effect of thermal shock on Cu extrusion of the TSV was investigated. A thermal shock test was conducted from -65 °C to 150 C for 250, 500, and 1000 cycles. The experimental results showed that a defect free Cu-filled TSV was obtained by electroplating using periodic pulse-reverse current form. Cu extrusion occurred after the thermal shock test, and the average height of the pumped Cu increased from -0.3 to 0.78 um with increasing thermal shock cycles from 0 to 1000. An interfacial crack between Cu and Si was observed after 1000 cycles. The average grain size of Cu during the thermal shock test from 0 to 1000 cycles increased from 0.65 to 0.83 μm.

Original languageEnglish
Pages (from-to)459-465
Number of pages7
JournalJournal of Korean Institute of Metals and Materials
Issue number6
StatePublished - Jun 2014


  • Cu extusion
  • Electronic materials
  • Focused ion beam (FIB)
  • Microstructure
  • Plating


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