Effect of trap-assisted tunneling on off-current property of a-InGaZnO thin-film transistors

Jihwan Park; Do Kyung Kim; Jun Ik Park; Jaehoon Park; Philippe Lang; Muhan Choi; Hyeok Kim; Jin Hyuk Bae

doi:10.1080/15421406.2020.1741816

Effect of trap-assisted tunneling on off-current property of a-InGaZnO thin-film transistors

Jihwan Park, Do Kyung Kim, Jun Ik Park, Jaehoon Park, Philippe Lang, Muhan Choi, Hyeok Kim, Jin Hyuk Bae

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We describe how the off-state current (I_off) property of amorphous InGaZnO (a-IGZO) thin-film transistors is caused by trap-assisted tunneling (TAT) by using a two-dimensional device simulation software application (Atlas 2 D, Silvaco). We found that I_off can be increased by controlling the bandgap energy (E_G) and the effective mass of electron (m_e) of a-IGZO transistors. When m_e was increased from 0.32 to 0.38 m_o (mass of a free electron), the point at which I_off started to increase in the region of negative gate voltage (V_GS) shifted from −4.7 to −7.4 V. In addition, when E_G was changed from 3.05 to 3.2 eV, the average value of I_off changed from 3.13 × 10⁻¹³ to 2.4 × 10⁻¹⁴ A. This implies that E_G and m_e influence the increase in I_off in a-IGZO TFTs because of the difficulty associated with TAT.

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Molecular Crystals and Liquid Crystals
Volume	705
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2020.1741816
State	Published - 2 Jul 2020

Keywords

Off-current
simulation
thin-film transistors
trap-assisted tunneling

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10.1080/15421406.2020.1741816

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title = "Effect of trap-assisted tunneling on off-current property of a-InGaZnO thin-film transistors",

abstract = "We describe how the off-state current (Ioff) property of amorphous InGaZnO (a-IGZO) thin-film transistors is caused by trap-assisted tunneling (TAT) by using a two-dimensional device simulation software application (Atlas 2 D, Silvaco). We found that Ioff can be increased by controlling the bandgap energy (EG) and the effective mass of electron (me) of a-IGZO transistors. When me was increased from 0.32 to 0.38 mo (mass of a free electron), the point at which Ioff started to increase in the region of negative gate voltage (VGS) shifted from −4.7 to −7.4 V. In addition, when EG was changed from 3.05 to 3.2 eV, the average value of Ioff changed from 3.13 × 10−13 to 2.4 × 10−14 A. This implies that EG and me influence the increase in Ioff in a-IGZO TFTs because of the difficulty associated with TAT.",

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author = "Jihwan Park and Kim, {Do Kyung} and Park, {Jun Ik} and Jaehoon Park and Philippe Lang and Muhan Choi and Hyeok Kim and Bae, {Jin Hyuk}",

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AU - Park, Jihwan

AU - Kim, Do Kyung

AU - Park, Jun Ik

AU - Park, Jaehoon

AU - Lang, Philippe

AU - Choi, Muhan

AU - Kim, Hyeok

AU - Bae, Jin Hyuk

PY - 2020/7/2

Y1 - 2020/7/2

N2 - We describe how the off-state current (Ioff) property of amorphous InGaZnO (a-IGZO) thin-film transistors is caused by trap-assisted tunneling (TAT) by using a two-dimensional device simulation software application (Atlas 2 D, Silvaco). We found that Ioff can be increased by controlling the bandgap energy (EG) and the effective mass of electron (me) of a-IGZO transistors. When me was increased from 0.32 to 0.38 mo (mass of a free electron), the point at which Ioff started to increase in the region of negative gate voltage (VGS) shifted from −4.7 to −7.4 V. In addition, when EG was changed from 3.05 to 3.2 eV, the average value of Ioff changed from 3.13 × 10−13 to 2.4 × 10−14 A. This implies that EG and me influence the increase in Ioff in a-IGZO TFTs because of the difficulty associated with TAT.

AB - We describe how the off-state current (Ioff) property of amorphous InGaZnO (a-IGZO) thin-film transistors is caused by trap-assisted tunneling (TAT) by using a two-dimensional device simulation software application (Atlas 2 D, Silvaco). We found that Ioff can be increased by controlling the bandgap energy (EG) and the effective mass of electron (me) of a-IGZO transistors. When me was increased from 0.32 to 0.38 mo (mass of a free electron), the point at which Ioff started to increase in the region of negative gate voltage (VGS) shifted from −4.7 to −7.4 V. In addition, when EG was changed from 3.05 to 3.2 eV, the average value of Ioff changed from 3.13 × 10−13 to 2.4 × 10−14 A. This implies that EG and me influence the increase in Ioff in a-IGZO TFTs because of the difficulty associated with TAT.

KW - Off-current

KW - simulation

KW - thin-film transistors

KW - trap-assisted tunneling

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Effect of trap-assisted tunneling on off-current property of a-InGaZnO thin-film transistors

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