Effective deposition of nanocrystalline silicon thin films at 200 °C by catalytic CVD

Tae Hwan Kim; Kyoung Min Lee; Jae Dam Hwang; Youn Jin Lee; Sunghwan Won; Junghyun Sok; Kyoungwan Park; Wan Shick Hong

Effective deposition of nanocrystalline silicon thin films at 200 °C by catalytic CVD

Tae Hwan Kim, Kyoung Min Lee, Jae Dam Hwang, Youn Jin Lee, Sunghwan Won, Junghyun Sok, Kyoungwan Park, Wan Shick Hong

University of Seoul

Research output: Contribution to conference › Paper › peer-review

Abstract

We attempted the change in the hydrogen dilution ratio with deposition time in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film in 18 minutes.

Original language	English
Pages	711-712
Number of pages	2
State	Published - 2008
Event	15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 3 Dec 2008 → 5 Dec 2008

Conference

Conference	15th International Display Workshops, IDW '08
Country/Territory	Japan
City	Niigata
Period	3/12/08 → 5/12/08

Cite this

@conference{c37b17b72e86469da5f240af39d979d1,

title = "Effective deposition of nanocrystalline silicon thin films at 200 °C by catalytic CVD",

abstract = "We attempted the change in the hydrogen dilution ratio with deposition time in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film in 18 minutes.",

author = "Kim, \{Tae Hwan\} and Lee, \{Kyoung Min\} and Hwang, \{Jae Dam\} and Lee, \{Youn Jin\} and Sunghwan Won and Junghyun Sok and Kyoungwan Park and Hong, \{Wan Shick\}",

year = "2008",

language = "English",

pages = "711--712",

note = "15th International Display Workshops, IDW '08 ; Conference date: 03-12-2008 Through 05-12-2008",

}

TY - CONF

T1 - Effective deposition of nanocrystalline silicon thin films at 200 °C by catalytic CVD

AU - Kim, Tae Hwan

AU - Lee, Kyoung Min

AU - Hwang, Jae Dam

AU - Lee, Youn Jin

AU - Won, Sunghwan

AU - Sok, Junghyun

AU - Park, Kyoungwan

AU - Hong, Wan Shick

PY - 2008

Y1 - 2008

N2 - We attempted the change in the hydrogen dilution ratio with deposition time in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film in 18 minutes.

AB - We attempted the change in the hydrogen dilution ratio with deposition time in a Cat-CVD system to achieve both the minimal incubation layer and the high throughput. We obtained the incubation layer thickness of 3 nm, and were able to grow a 200 nm-thick film in 18 minutes.

UR - https://www.scopus.com/pages/publications/77954128510

M3 - Paper

AN - SCOPUS:77954128510

SP - 711

EP - 712

T2 - 15th International Display Workshops, IDW '08

Y2 - 3 December 2008 through 5 December 2008

ER -

Effective deposition of nanocrystalline silicon thin films at 200 °C by catalytic CVD

Abstract

Conference

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