Effects of a delta-layer insertion on the ultraviolet light emission characteristics of III-nitride quantum well structures

Seoung Hwan Park; Doyeol Ahn

doi:10.1016/j.spmi.2017.10.025

Effects of a delta-layer insertion on the ultraviolet light emission characteristics of III-nitride quantum well structures

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Effects of the AlGaN delta-layer insertion in a quantum well on the ultraviolet (UV) light emission characteristics of wurtzite (0001)-oriented AlGaN/AlN quantum well (QW) structures are theoretically studied. The peak emission intensity is shown to depend on the delta-layers position within the QW. For QW structures grown on Al-face AlN substrate, the light emission characteristics is improved as the AlGaN delta-layer goes away from the substrate. Also, the peak emission intensity gradually increases with increasing Al content x_d in the delta-layer. The peak intensity of spontaneous emission spectrum for the QW structure with a delta-layer is increased by about 20–30%, compared to that of the conventional QW structure without the delta-layer.

Original language	English
Pages (from-to)	665-670
Number of pages	6
Journal	Superlattices and Microstructures
Volume	112
DOIs	https://doi.org/10.1016/j.spmi.2017.10.025
State	Published - Dec 2017

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title = "Effects of a delta-layer insertion on the ultraviolet light emission characteristics of III-nitride quantum well structures",

abstract = "Effects of the AlGaN delta-layer insertion in a quantum well on the ultraviolet (UV) light emission characteristics of wurtzite (0001)-oriented AlGaN/AlN quantum well (QW) structures are theoretically studied. The peak emission intensity is shown to depend on the delta-layers position within the QW. For QW structures grown on Al-face AlN substrate, the light emission characteristics is improved as the AlGaN delta-layer goes away from the substrate. Also, the peak emission intensity gradually increases with increasing Al content xd in the delta-layer. The peak intensity of spontaneous emission spectrum for the QW structure with a delta-layer is increased by about 20–30%, compared to that of the conventional QW structure without the delta-layer.",

author = "Park, {Seoung Hwan} and Doyeol Ahn",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

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doi = "10.1016/j.spmi.2017.10.025",

language = "English",

volume = "112",

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AU - Park, Seoung Hwan

AU - Ahn, Doyeol

PY - 2017/12

Y1 - 2017/12

N2 - Effects of the AlGaN delta-layer insertion in a quantum well on the ultraviolet (UV) light emission characteristics of wurtzite (0001)-oriented AlGaN/AlN quantum well (QW) structures are theoretically studied. The peak emission intensity is shown to depend on the delta-layers position within the QW. For QW structures grown on Al-face AlN substrate, the light emission characteristics is improved as the AlGaN delta-layer goes away from the substrate. Also, the peak emission intensity gradually increases with increasing Al content xd in the delta-layer. The peak intensity of spontaneous emission spectrum for the QW structure with a delta-layer is increased by about 20–30%, compared to that of the conventional QW structure without the delta-layer.

AB - Effects of the AlGaN delta-layer insertion in a quantum well on the ultraviolet (UV) light emission characteristics of wurtzite (0001)-oriented AlGaN/AlN quantum well (QW) structures are theoretically studied. The peak emission intensity is shown to depend on the delta-layers position within the QW. For QW structures grown on Al-face AlN substrate, the light emission characteristics is improved as the AlGaN delta-layer goes away from the substrate. Also, the peak emission intensity gradually increases with increasing Al content xd in the delta-layer. The peak intensity of spontaneous emission spectrum for the QW structure with a delta-layer is increased by about 20–30%, compared to that of the conventional QW structure without the delta-layer.

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DO - 10.1016/j.spmi.2017.10.025

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SN - 0749-6036

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SP - 665

EP - 670

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Effects of a delta-layer insertion on the ultraviolet light emission characteristics of III-nitride quantum well structures

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