Effects of annealing on the electrical properties of the BLT/STA/Si structure for ferroelectric-gate field-effect transistors

Engineering

• Field-Effect Transistor 100%
• Windows 100%
• Annealing 100%
• Deposited Film 100%
• Measurement 50%
• Characteristics 50%
• Substrates 50%
• Density 50%
• High Temperature 50%
• Voltage 50%
• Thin Films 50%
• Crystallinity 50%
• Capacitance 50%
• Retention Time 50%
• Buffer Layer 50%
• Annealing Temperature 50%
• X-Ray Diffraction Analysis 50%
• Oxide Thickness 50%
• Data Retention 50%
• Polycrystalline 50%
• Bias Voltage 50%

Material Science

• Field Effect Transistor 100%
• Electrical Property 100%
• Ferroelectric Material 100%
• Annealing 100%
• Temperature 66%
• X-Ray Diffraction 33%
• Density 33%
• Thin Films 33%
• Oxide Compound 33%
• Capacitance 33%
• Buffer Layer 33%
• Ferroelectricity 33%