Abstract
The effects of antimony incorporation and a convex compositional step-gradient on the surface morphology, defect generation, and defect propagation properties of InAsyP1-y metamorphic buffer layers (MBLs) were investigated. The incorporation of Sb reduces the root-mean-square (RMS) of the surface roughness, and complete elimination of the arsenic from the MBL (i.e. InPzSb1-z) leads to a reduction of RMS values of the surface roughness from 16 nm (InAs yP1-y) to 3.4 nm (InPzSb1-z), without noticeably altering the defect density in the upper layers of the MBL. InP1-xSbx layers grown on an InPzSb 1-z MBL have reduced hillock formation and exhibit energy bandgaps within 8% of that expected from theory.
Original language | English |
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Pages (from-to) | 96-101 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 315 |
Issue number | 1 |
DOIs | |
State | Published - 15 Jan 2011 |
Keywords
- A3. Metalorganic vapor phase epitaxy
- B1. Antimonides
- B1. Arsenides
- B1. Indium compounds
- B1. Phosphides
- B3. Infrared devices