Effects of antimony (Sb) incorporation on MOVPE grown InAs yP1-y metamorphic buffer layers on InP substrates

J. Kirch, T. W. Kim, J. Konen, L. J. Mawst, T. F. Kuech, T. S. Kuan

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18 Scopus citations

Abstract

The effects of antimony incorporation and a convex compositional step-gradient on the surface morphology, defect generation, and defect propagation properties of InAsyP1-y metamorphic buffer layers (MBLs) were investigated. The incorporation of Sb reduces the root-mean-square (RMS) of the surface roughness, and complete elimination of the arsenic from the MBL (i.e. InPzSb1-z) leads to a reduction of RMS values of the surface roughness from 16 nm (InAs yP1-y) to 3.4 nm (InPzSb1-z), without noticeably altering the defect density in the upper layers of the MBL. InP1-xSbx layers grown on an InPzSb 1-z MBL have reduced hillock formation and exhibit energy bandgaps within 8% of that expected from theory.

Original languageEnglish
Pages (from-to)96-101
Number of pages6
JournalJournal of Crystal Growth
Volume315
Issue number1
DOIs
StatePublished - 15 Jan 2011

Keywords

  • A3. Metalorganic vapor phase epitaxy
  • B1. Antimonides
  • B1. Arsenides
  • B1. Indium compounds
  • B1. Phosphides
  • B3. Infrared devices

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