Effects of confinement on the valley splitting of si quantum structures

S. N. Ko, J. H. Bae, Y. Y. Lee, Y. H. Moon, J. H. Oh, D. Ahn

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Valley splitting in SiGe/Si/SiGe heterostructures is calculated with the multi-valley effective mass theory. By examining various quantum structures, such as wells, wires and dots, we show that the valley splitting exhibits an oscillating behavior as a function of geometrical size. The maximum value of the valley splitting is found to be on the order of meV for a typical well-width of about 5 nm, which is consistent with experimental values. We discuss the origins of the valley splitting and the confinement effects in the presence of an electric-field.

Original languageEnglish
Pages (from-to)3322-3327
Number of pages6
JournalJournal of the Korean Physical Society
Issue number6
StatePublished - Dec 2008


  • Quantum dot
  • SiGe heterostructure
  • Valley splitting


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