Effects of film thickness and deposition rate on the diffusion barrier performance of titanium nitride in Cu-through silicon vias

Young Joo Lee; Han Wool Yeon; Sung Yup Jung; Se Kwon Na; Jong Seung Park; Yong Yoon Choi; Hoo Jeong Lee; Oh Sung Song; Young Chang Joo

doi:10.1007/s13391-013-3108-0

Effects of film thickness and deposition rate on the diffusion barrier performance of titanium nitride in Cu-through silicon vias

Young Joo Lee, Han Wool Yeon, Sung Yup Jung, Se Kwon Na, Jong Seung Park, Yong Yoon Choi, Hoo Jeong Lee, Oh Sung Song, Young Chang Joo

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The influence of morphology on the performance of TiN diffusion barriers was studied by investigating the effects of film thickness and deposition rate. Increasing the TiN film thickness was ineffective in preventing Cu migration due to the columnar growth of TiN, which left rapid diffusion paths for Cu. When the thickness of the TiN film was less than 10 nm, slowly deposited TiN films showed better Cu barrier performance than rapidly deposited TiN films due to the formation of an amorphous structure, which is an effective phase for preventing Cu migration.

Original language	English
Pages (from-to)	275-279
Number of pages	5
Journal	Electronic Materials Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1007/s13391-013-3108-0
State	Published - Jan 2014

Keywords

Cu interconnects
diffusion barrier
microstructure
titanium nitride

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10.1007/s13391-013-3108-0

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title = "Effects of film thickness and deposition rate on the diffusion barrier performance of titanium nitride in Cu-through silicon vias",

abstract = "The influence of morphology on the performance of TiN diffusion barriers was studied by investigating the effects of film thickness and deposition rate. Increasing the TiN film thickness was ineffective in preventing Cu migration due to the columnar growth of TiN, which left rapid diffusion paths for Cu. When the thickness of the TiN film was less than 10 nm, slowly deposited TiN films showed better Cu barrier performance than rapidly deposited TiN films due to the formation of an amorphous structure, which is an effective phase for preventing Cu migration.",

keywords = "Cu interconnects, diffusion barrier, microstructure, titanium nitride",

author = "Lee, {Young Joo} and Yeon, {Han Wool} and Jung, {Sung Yup} and Na, {Se Kwon} and Park, {Jong Seung} and Choi, {Yong Yoon} and Lee, {Hoo Jeong} and Song, {Oh Sung} and Joo, {Young Chang}",

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T1 - Effects of film thickness and deposition rate on the diffusion barrier performance of titanium nitride in Cu-through silicon vias

AU - Lee, Young Joo

AU - Yeon, Han Wool

AU - Jung, Sung Yup

AU - Na, Se Kwon

AU - Park, Jong Seung

AU - Choi, Yong Yoon

AU - Lee, Hoo Jeong

AU - Song, Oh Sung

AU - Joo, Young Chang

PY - 2014/1

Y1 - 2014/1

N2 - The influence of morphology on the performance of TiN diffusion barriers was studied by investigating the effects of film thickness and deposition rate. Increasing the TiN film thickness was ineffective in preventing Cu migration due to the columnar growth of TiN, which left rapid diffusion paths for Cu. When the thickness of the TiN film was less than 10 nm, slowly deposited TiN films showed better Cu barrier performance than rapidly deposited TiN films due to the formation of an amorphous structure, which is an effective phase for preventing Cu migration.

AB - The influence of morphology on the performance of TiN diffusion barriers was studied by investigating the effects of film thickness and deposition rate. Increasing the TiN film thickness was ineffective in preventing Cu migration due to the columnar growth of TiN, which left rapid diffusion paths for Cu. When the thickness of the TiN film was less than 10 nm, slowly deposited TiN films showed better Cu barrier performance than rapidly deposited TiN films due to the formation of an amorphous structure, which is an effective phase for preventing Cu migration.

KW - Cu interconnects

KW - diffusion barrier

KW - microstructure

KW - titanium nitride

UR - http://www.scopus.com/inward/record.url?scp=84893386057&partnerID=8YFLogxK

U2 - 10.1007/s13391-013-3108-0

DO - 10.1007/s13391-013-3108-0

M3 - Article

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SN - 1738-8090

VL - 10

SP - 275

EP - 279

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 1

ER -

Effects of film thickness and deposition rate on the diffusion barrier performance of titanium nitride in Cu-through silicon vias

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