Effects of strain distribution on the optical gain of InGaN/AlInGaN

D. Ahn; S. H. Park; B. H. Koo

doi:10.1109/nusod.2009.5297194

Effects of strain distribution on the optical gain of InGaN/AlInGaN

D. Ahn, S. H. Park, B. H. Koo

School of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs)is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Siginificant enhancement of optical gain is expected with the introduction of strain distribution layers.

Original language	English
Title of host publication	9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009
Publisher	IEEE Computer Society
Pages	11-12
Number of pages	2
ISBN (Print)	9781424441808
DOIs	https://doi.org/10.1109/nusod.2009.5297194
State	Published - 2009
Event	9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009 - Gwangju, Korea, Republic of Duration: 14 Sep 2009 → 17 Sep 2009

Publication series

Name	9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009

Conference

Conference	9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009
Country/Territory	Korea, Republic of
City	Gwangju
Period	14/09/09 → 17/09/09

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10.1109/nusod.2009.5297194

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Ahn, D., Park, S. H., & Koo, B. H. (2009). Effects of strain distribution on the optical gain of InGaN/AlInGaN. In 9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009 (pp. 11-12). Article 5297194 (9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009). IEEE Computer Society. https://doi.org/10.1109/nusod.2009.5297194

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title = "Effects of strain distribution on the optical gain of InGaN/AlInGaN",

abstract = "Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs)is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Siginificant enhancement of optical gain is expected with the introduction of strain distribution layers.",

author = "D. Ahn and Park, {S. H.} and Koo, {B. H.}",

year = "2009",

doi = "10.1109/nusod.2009.5297194",

language = "English",

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series = "9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009",

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booktitle = "9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009",

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Ahn, D, Park, SH & Koo, BH 2009, Effects of strain distribution on the optical gain of InGaN/AlInGaN. in 9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009., 5297194, 9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009, IEEE Computer Society, pp. 11-12, 9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009, Gwangju, Korea, Republic of, 14/09/09. https://doi.org/10.1109/nusod.2009.5297194

Effects of strain distribution on the optical gain of InGaN/AlInGaN. / Ahn, D.; Park, S. H.; Koo, B. H.
9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009. IEEE Computer Society, 2009. p. 11-12 5297194 (9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of strain distribution on the optical gain of InGaN/AlInGaN

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AU - Park, S. H.

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N2 - Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs)is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Siginificant enhancement of optical gain is expected with the introduction of strain distribution layers.

AB - Effects of the strain distribution on the optical gain of InGaN-AlInGaN QW light-emitting diodes (LEDs)is investigated. The amount of stress and strain in the multilayer quantum well structures are calculated taking into account the difference between crystalline parameters. Siginificant enhancement of optical gain is expected with the introduction of strain distribution layers.

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DO - 10.1109/nusod.2009.5297194

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SN - 9781424441808

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BT - 9th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2009

PB - IEEE Computer Society

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Y2 - 14 September 2009 through 17 September 2009

ER -

Effects of strain distribution on the optical gain of InGaN/AlInGaN

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