Effects of total gas velocity during growth of undoped GaN epitaxial layer on sapphire (0 0 0 1) substrate by horizontal MOCVD

M. S. Kwon, S. I. Cho

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Fingerprint

Dive into the research topics of 'Effects of total gas velocity during growth of undoped GaN epitaxial layer on sapphire (0 0 0 1) substrate by horizontal MOCVD'. Together they form a unique fingerprint.

Engineering

Material Science