Abstract
We present theoretical predictions of the second-harmonic susceptibility due to an intersubband transition within the conduction band of a quantum well in an external applied electric field. The asymmetry of the quantum well due to the electric field accounts for the nonvanishing of the second-order susceptibilities. It is shown that for moderate values of an applied electric field of 10-70 kV/cm, the second-harmonic susceptibility is generally 10-100 times larger than that of bulk GaAs. Furthermore, this procedure of second-harmonic generation can be controlled by an external modulating voltage.
Original language | English |
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Pages (from-to) | 697-699 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 52 |
Issue number | 9 |
DOIs | |
State | Published - 1988 |