Electrical and Optoelectrical Properties of 1T´-phase MoTe2 Atomic Layer Film

Dong Hwan Kim, Tae Wan Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Transition metal dichalcogenides with two-dimensional ultrathin film-type structures are suitable for applications in semiconductor devices owing to the presence of a direct band gap. Among these materials, tungsten ditelluride (WTe2) and molybdenum ditelluride (MoTe2) have potential applications in optical and electrical devices as they easily control the phase and exhibit unique electrical transport characteristics. In this study, 1T´-phase few-layers MoTe2 thin films were grown on a silicon dioxide/silicon substrate using a metal organic chemical vapor deposition system; the phase of the grown MoTe2 thin film was analyzed using Raman spectroscopy and few-layers MoTe2 were observed using atomic force microscopy. A high-performance photodetector and field effect transistor were fabricated and used to analyze the photocurrent density and electrical characteristics of the thin films. On comparing the current of the laser with and without illumination for a photodetector based on the 1T´ phase, the results indicated a significant increase in the photocurrent under illumination. This indicates the strong dependence of the few-layers MoTe2 thin film on laser power. Thus, the 1T´-phase few-layers MoTe2 thin film with a high photocurrent density and excellent electrical transport characteristics is considered a promising material for high-performance photodetectors.

Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalApplied Science and Convergence Technology
Issue number5
StatePublished - 2019


  • 1T´-phase
  • Field effect transistor
  • Metal organic chemical vapor deposition
  • MoTe
  • Photodetector


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