Electrical characteristics of metal-ferroelectric-semiconductor structures based on poly(vinylidene fluoride)

Jeong Hwan Kim; Dong Won Kim; Ho Seung Jeon; Byung Eun Park

doi:10.1143/JJAP.46.6976

Electrical characteristics of metal-ferroelectric-semiconductor structures based on poly(vinylidene fluoride)

Jeong Hwan Kim, Dong Won Kim, Ho Seung Jeon, Byung Eun Park

School of Electrical and Computer Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We prepared poly(vinylidene fluoride) (PVDF) films in the β phase by a sol-gel method using PVDF solutions with different weight fractions. The electrical properties of PVDF films were studied for the possibility of using them in one-transistor (1-T)-type ferroelectric random-access memories (FRAMs). In this research, the Au/PVDF/Si structure made from PVDF solution of 6 wt % concentration showed good ferroelectric and electrical properties. The memory window width and current density for the PVDF film from the 6 wt % PVDF solution were about 1.8 V and 10^-6 A/cm² for a bias voltage of 5 V, respectively. It is expected from these good ferroelectric properties that PVDF films will be suitable for low-cost 1-T-type FRAMs operating at a low voltage.

Original language	English
Pages (from-to)	6976-6978
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	10 B
DOIs	https://doi.org/10.1143/JJAP.46.6976
State	Published - 22 Oct 2007

Keywords

FRAM
Low voltage
MFS
Memory
PVDF
Sol-gel

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title = "Electrical characteristics of metal-ferroelectric-semiconductor structures based on poly(vinylidene fluoride)",

abstract = "We prepared poly(vinylidene fluoride) (PVDF) films in the β phase by a sol-gel method using PVDF solutions with different weight fractions. The electrical properties of PVDF films were studied for the possibility of using them in one-transistor (1-T)-type ferroelectric random-access memories (FRAMs). In this research, the Au/PVDF/Si structure made from PVDF solution of 6 wt % concentration showed good ferroelectric and electrical properties. The memory window width and current density for the PVDF film from the 6 wt % PVDF solution were about 1.8 V and 10-6 A/cm2 for a bias voltage of 5 V, respectively. It is expected from these good ferroelectric properties that PVDF films will be suitable for low-cost 1-T-type FRAMs operating at a low voltage.",

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author = "Kim, {Jeong Hwan} and Kim, {Dong Won} and Jeon, {Ho Seung} and Park, {Byung Eun}",

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doi = "10.1143/JJAP.46.6976",

language = "English",

volume = "46",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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}

Electrical characteristics of metal-ferroelectric-semiconductor structures based on poly(vinylidene fluoride). / Kim, Jeong Hwan; Kim, Dong Won; Jeon, Ho Seung et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 10 B, 22.10.2007, p. 6976-6978.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electrical characteristics of metal-ferroelectric-semiconductor structures based on poly(vinylidene fluoride)

AU - Kim, Jeong Hwan

AU - Kim, Dong Won

AU - Jeon, Ho Seung

AU - Park, Byung Eun

PY - 2007/10/22

Y1 - 2007/10/22

N2 - We prepared poly(vinylidene fluoride) (PVDF) films in the β phase by a sol-gel method using PVDF solutions with different weight fractions. The electrical properties of PVDF films were studied for the possibility of using them in one-transistor (1-T)-type ferroelectric random-access memories (FRAMs). In this research, the Au/PVDF/Si structure made from PVDF solution of 6 wt % concentration showed good ferroelectric and electrical properties. The memory window width and current density for the PVDF film from the 6 wt % PVDF solution were about 1.8 V and 10-6 A/cm2 for a bias voltage of 5 V, respectively. It is expected from these good ferroelectric properties that PVDF films will be suitable for low-cost 1-T-type FRAMs operating at a low voltage.

AB - We prepared poly(vinylidene fluoride) (PVDF) films in the β phase by a sol-gel method using PVDF solutions with different weight fractions. The electrical properties of PVDF films were studied for the possibility of using them in one-transistor (1-T)-type ferroelectric random-access memories (FRAMs). In this research, the Au/PVDF/Si structure made from PVDF solution of 6 wt % concentration showed good ferroelectric and electrical properties. The memory window width and current density for the PVDF film from the 6 wt % PVDF solution were about 1.8 V and 10-6 A/cm2 for a bias voltage of 5 V, respectively. It is expected from these good ferroelectric properties that PVDF films will be suitable for low-cost 1-T-type FRAMs operating at a low voltage.

KW - FRAM

KW - Low voltage

KW - MFS

KW - Memory

KW - PVDF

KW - Sol-gel

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DO - 10.1143/JJAP.46.6976

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10 B

ER -

Electrical characteristics of metal-ferroelectric-semiconductor structures based on poly(vinylidene fluoride)

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Keywords

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