Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si

Ga Eon Kang, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jun Hyeok Heo, Jaewon Jang, Jin Hyuk Bae, Sin Hyung Lee, In Man Kang

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Material Science