Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si

  • Ga Eon Kang
  • , Sang Ho Lee
  • , Jin Park
  • , So Ra Min
  • , Geon Uk Kim
  • , Jun Hyeok Heo
  • , Jaewon Jang
  • , Jin Hyuk Bae
  • , Sin Hyung Lee
  • , In Man Kang

Research output: Contribution to journalArticlepeer-review

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