Electrical properties of Au/(Bi,La)4Ti3O 12/Pt/SrTa2O6/Si field-effect transistor

Joo Nam Kim; Ho Seong Jeon; Byung Eun Park

doi:10.1080/00150190902888574

Electrical properties of Au/(Bi,La)₄Ti₃O ₁₂/Pt/SrTa₂O₆/Si field-effect transistor

Joo Nam Kim, Ho Seong Jeon, Byung Eun Park

School of Electrical and Computer Engineering

University of Seoul

Research output: Contribution to journal › Conference article › peer-review

Abstract

The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor using the Au/(Bi,La)4Ti3O12(BLT)/Pt/SrTa2O6(STA)/Si structure is prepared. The STA and BLT films are spun-casted by the sol-gel method. The equivalent oxide thickness value of the STA thin film is 5.2 nm and negligibly small hysteresis loops have been observed for the Au/STA/Si structure. The leakage current density is lower than 10- 7 A/cm2 under 6 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm2 at 450 kV/cm. The Au/BLT/Pt/STA/Si MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain voltage of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 4, the drain current of 1.2×10- 5 A rapidly drops after 1.4×104 s to 4×10- 6 A. The retention time improves as the AI/AF ratio is increased to 8 and it has been found to drop after 8.5×104 seconds.

Original language	English
Pages (from-to)	639-645
Number of pages	7
Journal	Ferroelectrics
Volume	385
Issue number	1 PART 6
DOIs	https://doi.org/10.1080/00150190902888574
State	Published - 2009
Event	6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan, Province of China Duration: 2 Aug 2008 → 6 Aug 2008

Keywords

FeFET, retention time
MFMIS structure

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10.1080/00150190902888574

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title = "Electrical properties of Au/(Bi,La)4Ti3O 12/Pt/SrTa2O6/Si field-effect transistor",

abstract = "The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor using the Au/(Bi,La)4Ti3O12(BLT)/Pt/SrTa2O6(STA)/Si structure is prepared. The STA and BLT films are spun-casted by the sol-gel method. The equivalent oxide thickness value of the STA thin film is 5.2 nm and negligibly small hysteresis loops have been observed for the Au/STA/Si structure. The leakage current density is lower than 10- 7 A/cm2 under 6 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm2 at 450 kV/cm. The Au/BLT/Pt/STA/Si MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain voltage of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 4, the drain current of 1.2×10- 5 A rapidly drops after 1.4×104 s to 4×10- 6 A. The retention time improves as the AI/AF ratio is increased to 8 and it has been found to drop after 8.5×104 seconds.",

keywords = "FeFET, retention time, MFMIS structure",

author = "Kim, {Joo Nam} and Jeon, {Ho Seong} and Park, {Byung Eun}",

year = "2009",

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T1 - Electrical properties of Au/(Bi,La)4Ti3O 12/Pt/SrTa2O6/Si field-effect transistor

AU - Kim, Joo Nam

AU - Jeon, Ho Seong

AU - Park, Byung Eun

PY - 2009

Y1 - 2009

N2 - The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor using the Au/(Bi,La)4Ti3O12(BLT)/Pt/SrTa2O6(STA)/Si structure is prepared. The STA and BLT films are spun-casted by the sol-gel method. The equivalent oxide thickness value of the STA thin film is 5.2 nm and negligibly small hysteresis loops have been observed for the Au/STA/Si structure. The leakage current density is lower than 10- 7 A/cm2 under 6 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm2 at 450 kV/cm. The Au/BLT/Pt/STA/Si MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain voltage of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 4, the drain current of 1.2×10- 5 A rapidly drops after 1.4×104 s to 4×10- 6 A. The retention time improves as the AI/AF ratio is increased to 8 and it has been found to drop after 8.5×104 seconds.

AB - The metal-ferroelectric-metal-insulator-semiconductor field-effect transistor using the Au/(Bi,La)4Ti3O12(BLT)/Pt/SrTa2O6(STA)/Si structure is prepared. The STA and BLT films are spun-casted by the sol-gel method. The equivalent oxide thickness value of the STA thin film is 5.2 nm and negligibly small hysteresis loops have been observed for the Au/STA/Si structure. The leakage current density is lower than 10- 7 A/cm2 under 6 V. The remanent polarization of the 420 nm-thick BLT film was 35.2 μC/cm2 at 450 kV/cm. The Au/BLT/Pt/STA/Si MFMIS-FET was fabricated with different area ratio (AI/AF) from 1 to 8. From the drain current-gate voltage characteristics at the drain voltage of 0.2 V, the memory window is only 0.5 V for the device with AI/AF = 1 but it is increased to 1.8 V as the AI/AF is increased to 8. For the AI/AF ratio of 4, the drain current of 1.2×10- 5 A rapidly drops after 1.4×104 s to 4×10- 6 A. The retention time improves as the AI/AF ratio is increased to 8 and it has been found to drop after 8.5×104 seconds.

KW - FeFET, retention time

KW - MFMIS structure

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Y2 - 2 August 2008 through 6 August 2008

ER -

Electrical properties of Au/(Bi,La)₄Ti₃O ₁₂/Pt/SrTa₂O₆/Si field-effect transistor

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Keywords

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