Electrical properties of bromine doped SnSe2 van der Waals material

Da Seul Hyeon; Min Suk Oh; Jin Tae Kim; Yong Jei Lee; Sang Il Kim; Seung Pil Moon; Nadra Hamayoun; Sung Wng Kim; Kyu Hyoung Lee; Joonho Bang; Kimoon Lee

doi:10.1088/1361-6463/aae257

Electrical properties of bromine doped SnSe₂ van der Waals material

Da Seul Hyeon
, Min Suk Oh
, Jin Tae Kim
, Yong Jei Lee
, Sang Il Kim
, Seung Pil Moon
, Nadra Hamayoun
, Sung Wng Kim
, Kyu Hyoung Lee
, Joonho Bang
, Kimoon Lee

Department of Materials Science and Engineering

Kunsan National University
Korea Electronics Technology Institute
Korea Electric Power
Sungkyunkwan University
Yonsei University
Institute of Science Tokyo

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Electrical properties of Br-doped SnSe₂ van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe_2-xBr_x via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A _1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe₂ system as it easily encourages the electron carrier concentration from ∼10¹⁷ to ∼10²⁰ cm^-3, thus resulting in the semiconductor-metal transition behavior.

Original language	English
Article number	455102
Journal	Journal Physics D: Applied Physics
Volume	51
Issue number	45
DOIs	https://doi.org/10.1088/1361-6463/aae257
State	Published - 9 Oct 2018

Keywords

doping
electrical transport
van der Waals (vdW) materials

Access to Document

10.1088/1361-6463/aae257

Cite this

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title = "Electrical properties of bromine doped SnSe2 van der Waals material",

abstract = "Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.",

keywords = "doping, electrical transport, van der Waals (vdW) materials",

author = "Hyeon, \{Da Seul\} and Oh, \{Min Suk\} and Kim, \{Jin Tae\} and Lee, \{Yong Jei\} and Kim, \{Sang Il\} and Moon, \{Seung Pil\} and Nadra Hamayoun and Kim, \{Sung Wng\} and Lee, \{Kyu Hyoung\} and Joonho Bang and Kimoon Lee",

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doi = "10.1088/1361-6463/aae257",

language = "English",

volume = "51",

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TY - JOUR

T1 - Electrical properties of bromine doped SnSe2 van der Waals material

AU - Hyeon, Da Seul

AU - Oh, Min Suk

AU - Kim, Jin Tae

AU - Lee, Yong Jei

AU - Kim, Sang Il

AU - Moon, Seung Pil

AU - Hamayoun, Nadra

AU - Kim, Sung Wng

AU - Lee, Kyu Hyoung

AU - Bang, Joonho

AU - Lee, Kimoon

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.

AB - Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.

KW - doping

KW - electrical transport

KW - van der Waals (vdW) materials

UR - https://www.scopus.com/pages/publications/85055502461

U2 - 10.1088/1361-6463/aae257

DO - 10.1088/1361-6463/aae257

M3 - Article

AN - SCOPUS:85055502461

SN - 0022-3727

VL - 51

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 45

M1 - 455102

ER -

Electrical properties of bromine doped SnSe₂ van der Waals material

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