Electrical properties of bromine doped SnSe2 van der Waals material

Da Seul Hyeon; Min Suk Oh; Jin Tae Kim; Yong Jei Lee; Sang Il Kim; Seung Pil Moon; Nadra Hamayoun; Sung Wng Kim; Kyu Hyoung Lee; Joonho Bang; Kimoon Lee

doi:10.1088/1361-6463/aae257

Electrical properties of bromine doped SnSe₂ van der Waals material

Da Seul Hyeon, Min Suk Oh, Jin Tae Kim, Yong Jei Lee, Sang Il Kim, Seung Pil Moon, Nadra Hamayoun, Sung Wng Kim, Kyu Hyoung Lee, Joonho Bang, Kimoon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Electrical properties of Br-doped SnSe₂ van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe_2-xBr_x via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A _1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe₂ system as it easily encourages the electron carrier concentration from ∼10¹⁷ to ∼10²⁰ cm^-3, thus resulting in the semiconductor-metal transition behavior.

Original language	English
Article number	455102
Journal	Journal Physics D: Applied Physics
Volume	51
Issue number	45
DOIs	https://doi.org/10.1088/1361-6463/aae257
State	Published - 9 Oct 2018

Keywords

doping
electrical transport
van der Waals (vdW) materials

Access to Document

10.1088/1361-6463/aae257

Cite this

@article{bfe21bbdef8e4747ac3a92195d143c2e,

title = "Electrical properties of bromine doped SnSe2 van der Waals material",

abstract = "Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.",

keywords = "doping, electrical transport, van der Waals (vdW) materials",

author = "Hyeon, \{Da Seul\} and Oh, \{Min Suk\} and Kim, \{Jin Tae\} and Lee, \{Yong Jei\} and Kim, \{Sang Il\} and Moon, \{Seung Pil\} and Nadra Hamayoun and Kim, \{Sung Wng\} and Lee, \{Kyu Hyoung\} and Joonho Bang and Kimoon Lee",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

month = oct,

day = "9",

doi = "10.1088/1361-6463/aae257",

language = "English",

volume = "51",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "Institute of Physics",

number = "45",

}

TY - JOUR

T1 - Electrical properties of bromine doped SnSe2 van der Waals material

AU - Hyeon, Da Seul

AU - Oh, Min Suk

AU - Kim, Jin Tae

AU - Lee, Yong Jei

AU - Kim, Sang Il

AU - Moon, Seung Pil

AU - Hamayoun, Nadra

AU - Kim, Sung Wng

AU - Lee, Kyu Hyoung

AU - Bang, Joonho

AU - Lee, Kimoon

PY - 2018/10/9

Y1 - 2018/10/9

N2 - Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.

AB - Electrical properties of Br-doped SnSe2 van der Waals (vdW) materials are investigated by synthesizing polycrystalline SnSe2-xBrx via a solid-state reaction route. From the x-ray diffraction and Raman spectra results, it can be confirmed that Br impurity substitutes well on a Se-site by minimizing the lattice deformation as well as the red-shift of A 1g vibrational mode corresponding to the Sn-Se bond. Electrical characterization reveals that Br dopant is an efficient electron donor for vdW SnSe2 system as it easily encourages the electron carrier concentration from ∼1017 to ∼1020 cm-3, thus resulting in the semiconductor-metal transition behavior.

KW - doping

KW - electrical transport

KW - van der Waals (vdW) materials

UR - https://www.scopus.com/pages/publications/85055502461

U2 - 10.1088/1361-6463/aae257

DO - 10.1088/1361-6463/aae257

M3 - Article

AN - SCOPUS:85055502461

SN - 0022-3727

VL - 51

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 45

M1 - 455102

ER -

Electrical properties of bromine doped SnSe₂ van der Waals material

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this