Electrical properties of double organic films for FRAM

S. W. Jeong, K. J. Kim, D. H. Han, B. E. Park

Research output: Contribution to journalConference articlepeer-review


Organic thin-film transistors were fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and cyanoethylpullulan (CyEPL) for the dielectrics. The influence of the double-organic-ferroelectric- layer structure composed of all ferroelectric dielectrics below regioregular poly(3-hexylthiophene) was investigated. The capacitance-voltage (C-V) hysteresis and flatband-voltage shift were found at -5 to +5 V, depending on the field direction. A difference in the transfer characteristic was observed as the effect of the P(VDF-TrFE))/(CyEPL) sandwich structure on the channel layer. Both the space charge at p-Si and the polarization due to the trapped charges affected the field across the ferroelectric dielectrics.

Original languageEnglish
Pages (from-to)168-174
Number of pages7
Issue number1
StatePublished - 2010
Event12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China
Duration: 23 Aug 200927 Aug 2009


  • Cyanoetylpullulan
  • FRAM
  • OTFTs
  • P(VDF-TrFE)
  • P3HT


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