Electrical properties of double organic films for FRAM

S. W. Jeong; K. J. Kim; D. H. Han; B. E. Park

doi:10.1080/00150193.2010.483196

Electrical properties of double organic films for FRAM

S. W. Jeong, K. J. Kim, D. H. Han, B. E. Park

School of Electrical and Computer Engineering

University of Seoul

Research output: Contribution to journal › Conference article › peer-review

Abstract

Organic thin-film transistors were fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and cyanoethylpullulan (CyEPL) for the dielectrics. The influence of the double-organic-ferroelectric- layer structure composed of all ferroelectric dielectrics below regioregular poly(3-hexylthiophene) was investigated. The capacitance-voltage (C-V) hysteresis and flatband-voltage shift were found at -5 to +5 V, depending on the field direction. A difference in the transfer characteristic was observed as the effect of the P(VDF-TrFE))/(CyEPL) sandwich structure on the channel layer. Both the space charge at p-Si and the polarization due to the trapped charges affected the field across the ferroelectric dielectrics.

Original language	English
Pages (from-to)	168-174
Number of pages	7
Journal	Ferroelectrics
Volume	405
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.483196
State	Published - 2010
Event	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China Duration: 23 Aug 2009 → 27 Aug 2009

Keywords

Cyanoetylpullulan
FRAM
OTFTs
P(VDF-TrFE)
P3HT

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10.1080/00150193.2010.483196

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title = "Electrical properties of double organic films for FRAM",

abstract = "Organic thin-film transistors were fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and cyanoethylpullulan (CyEPL) for the dielectrics. The influence of the double-organic-ferroelectric- layer structure composed of all ferroelectric dielectrics below regioregular poly(3-hexylthiophene) was investigated. The capacitance-voltage (C-V) hysteresis and flatband-voltage shift were found at -5 to +5 V, depending on the field direction. A difference in the transfer characteristic was observed as the effect of the P(VDF-TrFE))/(CyEPL) sandwich structure on the channel layer. Both the space charge at p-Si and the polarization due to the trapped charges affected the field across the ferroelectric dielectrics.",

keywords = "Cyanoetylpullulan, FRAM, OTFTs, P(VDF-TrFE), P3HT",

author = "Jeong, {S. W.} and Kim, {K. J.} and Han, {D. H.} and Park, {B. E.}",

year = "2010",

doi = "10.1080/00150193.2010.483196",

language = "English",

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pages = "168--174",

journal = "Ferroelectrics",

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publisher = "Taylor and Francis Ltd.",

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note = "12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 ; Conference date: 23-08-2009 Through 27-08-2009",

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TY - JOUR

T1 - Electrical properties of double organic films for FRAM

AU - Jeong, S. W.

AU - Kim, K. J.

AU - Han, D. H.

AU - Park, B. E.

PY - 2010

Y1 - 2010

N2 - Organic thin-film transistors were fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and cyanoethylpullulan (CyEPL) for the dielectrics. The influence of the double-organic-ferroelectric- layer structure composed of all ferroelectric dielectrics below regioregular poly(3-hexylthiophene) was investigated. The capacitance-voltage (C-V) hysteresis and flatband-voltage shift were found at -5 to +5 V, depending on the field direction. A difference in the transfer characteristic was observed as the effect of the P(VDF-TrFE))/(CyEPL) sandwich structure on the channel layer. Both the space charge at p-Si and the polarization due to the trapped charges affected the field across the ferroelectric dielectrics.

AB - Organic thin-film transistors were fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and cyanoethylpullulan (CyEPL) for the dielectrics. The influence of the double-organic-ferroelectric- layer structure composed of all ferroelectric dielectrics below regioregular poly(3-hexylthiophene) was investigated. The capacitance-voltage (C-V) hysteresis and flatband-voltage shift were found at -5 to +5 V, depending on the field direction. A difference in the transfer characteristic was observed as the effect of the P(VDF-TrFE))/(CyEPL) sandwich structure on the channel layer. Both the space charge at p-Si and the polarization due to the trapped charges affected the field across the ferroelectric dielectrics.

KW - Cyanoetylpullulan

KW - FRAM

KW - OTFTs

KW - P(VDF-TrFE)

KW - P3HT

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U2 - 10.1080/00150193.2010.483196

DO - 10.1080/00150193.2010.483196

M3 - Conference article

AN - SCOPUS:79955697499

SN - 0015-0193

VL - 405

SP - 168

EP - 174

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

ER -

Electrical properties of double organic films for FRAM

Abstract

Keywords

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