Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride- trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure

Gwang Geun Lee, Hui Seong Han, Yun Soo Choi, Byung Eun Park

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