Electrical properties of metal-ferroelectric-semiconductor structures based on ferroelectric polyvinylidene fluoride (PVDF)

Jeong Hwan Kim; Joo Nam Kim; Byung Eun Park

doi:10.3938/jkps.51.723

Electrical properties of metal-ferroelectric-semiconductor structures based on ferroelectric polyvinylidene fluoride (PVDF)

Jeong Hwan Kim, Joo Nam Kim, Byung Eun Park

School of Electrical and Computer Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A PVDF (polyvinylidene fluoride) thin film having a β phase was prepared by using sol-gel method. The film's properties were studied to evaluate the possibility of use in a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric- semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurements revealed that the Au/PVDF/Si structure with a 7 wt% film had a memory window width of about 1.8 V for a bias voltage sweep of 4 V.

Original language	English
Pages (from-to)	723-726
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	51
Issue number	2 PART I
DOIs	https://doi.org/10.3938/jkps.51.723
State	Published - Aug 2007

Keywords

C-V
MFS
Memory window width
PVDF
Sol-gel

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title = "Electrical properties of metal-ferroelectric-semiconductor structures based on ferroelectric polyvinylidene fluoride (PVDF)",

abstract = "A PVDF (polyvinylidene fluoride) thin film having a β phase was prepared by using sol-gel method. The film's properties were studied to evaluate the possibility of use in a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric- semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurements revealed that the Au/PVDF/Si structure with a 7 wt\% film had a memory window width of about 1.8 V for a bias voltage sweep of 4 V.",

keywords = "C-V, MFS, Memory window width, PVDF, Sol-gel",

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AU - Kim, Jeong Hwan

AU - Kim, Joo Nam

AU - Park, Byung Eun

PY - 2007/8

Y1 - 2007/8

N2 - A PVDF (polyvinylidene fluoride) thin film having a β phase was prepared by using sol-gel method. The film's properties were studied to evaluate the possibility of use in a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric- semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurements revealed that the Au/PVDF/Si structure with a 7 wt% film had a memory window width of about 1.8 V for a bias voltage sweep of 4 V.

AB - A PVDF (polyvinylidene fluoride) thin film having a β phase was prepared by using sol-gel method. The film's properties were studied to evaluate the possibility of use in a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric- semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurements revealed that the Au/PVDF/Si structure with a 7 wt% film had a memory window width of about 1.8 V for a bias voltage sweep of 4 V.

KW - C-V

KW - MFS

KW - Memory window width

KW - PVDF

KW - Sol-gel

UR - https://www.scopus.com/pages/publications/34548336871

U2 - 10.3938/jkps.51.723

DO - 10.3938/jkps.51.723

M3 - Article

AN - SCOPUS:34548336871

SN - 0374-4884

VL - 51

SP - 723

EP - 726

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2 PART I

ER -

Electrical properties of metal-ferroelectric-semiconductor structures based on ferroelectric polyvinylidene fluoride (PVDF)

Abstract

Keywords

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