@inproceedings{c328949a589a4a33a0a321a0daab8aac,
title = "Electrical properties of silicon-rich silicon carbide films prepared by using catalytic chemical vapor deposition",
abstract = "We studied electrical properties of the silicon rich silicon carbide (SRSC) films deposited by catalytic chemical vapor deposition (Cat-CVD) technique. A mixture of SiH4, CH4 and H2 gas was employed as the source gas in deposition process. Atomic composition of SRSC films and formation of Si QDs in SRSC films depended on control of CH4/SiH 4 mixture ratios. The each different tunneling behavior was observed in current-voltage (I-V) curve of two samples prepared at different CH 4/SiH4 mixture ratios. The PL spectra of two samples were also each different. These results were analyzed with relating formation of Si QDs in SRSC films.",
author = "Lee, {Kyoung Min} and Hwang, {Jae Dam} and Lee, {Youn Jin} and No, {Kil Sun} and Hong, {Wan Shick}",
year = "2010",
doi = "10.1149/1.3367211",
language = "English",
isbn = "9781566777933",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "61--64",
booktitle = "Nanoscale Luminescent Materials",
address = "United States",
edition = "3",
}