Electrical transport properties of a single wall carbon nanotube network

J. S. Hwang; H. T. Kim; H. K. Kim; M. H. Son; S. W. Hwang; D. Ahn

doi:10.1002/pssb.200880593

Electrical transport properties of a single wall carbon nanotube network

J. S. Hwang, H. T. Kim, H. K. Kim, M. H. Son, S. W. Hwang, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)-SWCNT (semiconducting), SWCNT (semiconducting)-SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias.

Original language	English
Pages (from-to)	744-746
Number of pages	3
Journal	Physica Status Solidi (B): Basic Research
Volume	246
Issue number	4
DOIs	https://doi.org/10.1002/pssb.200880593
State	Published - Apr 2009

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title = "Electrical transport properties of a single wall carbon nanotube network",

abstract = "A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)-SWCNT (semiconducting), SWCNT (semiconducting)-SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias.",

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T1 - Electrical transport properties of a single wall carbon nanotube network

AU - Hwang, J. S.

AU - Kim, H. T.

AU - Kim, H. K.

AU - Son, M. H.

AU - Hwang, S. W.

AU - Ahn, D.

PY - 2009/4

Y1 - 2009/4

N2 - A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)-SWCNT (semiconducting), SWCNT (semiconducting)-SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias.

AB - A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting)-SWCNT (semiconducting), SWCNT (semiconducting)-SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias.

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Electrical transport properties of a single wall carbon nanotube network

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