Electrical transport properties of lambda deoxyribonucleic acid films

Jong Seung Hwang, Sung Woo Hwang, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

Abstract

We have fabricated and characterized lambda deoxyribonucleic acid (DNA) field-effect transistor (FET) devices. Lambda DNA films were spin-coated between the source/drain metal electrodes, and the thickness was approximately 100 nm. The gate modulation of the FET devices exhibited nonlinear Isd-V sd, low ISd depletion, and a small Vg dependence. The nonlinearity was mostly due to the contact potential between the DNA and the metal electrodes. The weak hole transport behavior of the lambda DNA was attributed to the most conductive guanine bases from the good mixture of adenine, thymine, guanine, and cytosine bases. Our results suggest that the lambda DNA films may have semiconducting characteristics.

Original languageEnglish
Pages (from-to)352-355
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number1
DOIs
StatePublished - Jul 2009

Keywords

  • Conduction
  • Electrical transport
  • Field-effect transistor
  • Lambda DNA

Fingerprint

Dive into the research topics of 'Electrical transport properties of lambda deoxyribonucleic acid films'. Together they form a unique fingerprint.

Cite this