Electrical transport properties of lambda deoxyribonucleic acid films

Jong Seung Hwang; Sung Woo Hwang; Doyeol Ahn

doi:10.3938/jkps.55.352

Electrical transport properties of lambda deoxyribonucleic acid films

Jong Seung Hwang, Sung Woo Hwang, Doyeol Ahn

School of Electrical and Computer Engineering

Korea University

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated and characterized lambda deoxyribonucleic acid (DNA) field-effect transistor (FET) devices. Lambda DNA films were spin-coated between the source/drain metal electrodes, and the thickness was approximately 100 nm. The gate modulation of the FET devices exhibited nonlinear I_sd-V _sd, low I_Sd depletion, and a small V_g dependence. The nonlinearity was mostly due to the contact potential between the DNA and the metal electrodes. The weak hole transport behavior of the lambda DNA was attributed to the most conductive guanine bases from the good mixture of adenine, thymine, guanine, and cytosine bases. Our results suggest that the lambda DNA films may have semiconducting characteristics.

Original language	English
Pages (from-to)	352-355
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.352
State	Published - Jul 2009

Keywords

Conduction
Electrical transport
Field-effect transistor
Lambda DNA

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@article{fcc264e26dfa4c4497f04e5f9caaf469,

title = "Electrical transport properties of lambda deoxyribonucleic acid films",

abstract = "We have fabricated and characterized lambda deoxyribonucleic acid (DNA) field-effect transistor (FET) devices. Lambda DNA films were spin-coated between the source/drain metal electrodes, and the thickness was approximately 100 nm. The gate modulation of the FET devices exhibited nonlinear Isd-V sd, low ISd depletion, and a small Vg dependence. The nonlinearity was mostly due to the contact potential between the DNA and the metal electrodes. The weak hole transport behavior of the lambda DNA was attributed to the most conductive guanine bases from the good mixture of adenine, thymine, guanine, and cytosine bases. Our results suggest that the lambda DNA films may have semiconducting characteristics.",

keywords = "Conduction, Electrical transport, Field-effect transistor, Lambda DNA",

author = "Hwang, \{Jong Seung\} and Hwang, \{Sung Woo\} and Doyeol Ahn",

year = "2009",

month = jul,

doi = "10.3938/jkps.55.352",

language = "English",

volume = "55",

pages = "352--355",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

TY - JOUR

T1 - Electrical transport properties of lambda deoxyribonucleic acid films

AU - Hwang, Jong Seung

AU - Hwang, Sung Woo

AU - Ahn, Doyeol

PY - 2009/7

Y1 - 2009/7

N2 - We have fabricated and characterized lambda deoxyribonucleic acid (DNA) field-effect transistor (FET) devices. Lambda DNA films were spin-coated between the source/drain metal electrodes, and the thickness was approximately 100 nm. The gate modulation of the FET devices exhibited nonlinear Isd-V sd, low ISd depletion, and a small Vg dependence. The nonlinearity was mostly due to the contact potential between the DNA and the metal electrodes. The weak hole transport behavior of the lambda DNA was attributed to the most conductive guanine bases from the good mixture of adenine, thymine, guanine, and cytosine bases. Our results suggest that the lambda DNA films may have semiconducting characteristics.

AB - We have fabricated and characterized lambda deoxyribonucleic acid (DNA) field-effect transistor (FET) devices. Lambda DNA films were spin-coated between the source/drain metal electrodes, and the thickness was approximately 100 nm. The gate modulation of the FET devices exhibited nonlinear Isd-V sd, low ISd depletion, and a small Vg dependence. The nonlinearity was mostly due to the contact potential between the DNA and the metal electrodes. The weak hole transport behavior of the lambda DNA was attributed to the most conductive guanine bases from the good mixture of adenine, thymine, guanine, and cytosine bases. Our results suggest that the lambda DNA films may have semiconducting characteristics.

KW - Conduction

KW - Electrical transport

KW - Field-effect transistor

KW - Lambda DNA

UR - https://www.scopus.com/pages/publications/69249179505

U2 - 10.3938/jkps.55.352

DO - 10.3938/jkps.55.352

M3 - Article

AN - SCOPUS:69249179505

SN - 0374-4884

VL - 55

SP - 352

EP - 355

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Electrical transport properties of lambda deoxyribonucleic acid films

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Keywords

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