Abstract
Pure PQT12 and blended PQT12 with 1-20 wt % tetrakis(pentylthio)- tetrathiafulvalene (TPT-TTF) active layers were investigated by checking the output and transfer characteristics of bottom contact organic field-effect transistor (OFET). Normal OFET behavior was observed with pure PQT12. OFETs with several blend ratios were prepared and exposed to various solution concentrations of 2,4,6- trinitrotoluene (TNT). The increase in current observed in the blends after interaction with TNT analyte is found to be due to the formation of a type of complex between TNT and TPT-TTF, which inhibits the trap-induced current decrease caused by the TPT-TTF, and dominates the general dipole-trapping caused by TNT in pure PQT12. After exposure to the TNT solutions, the pure PQT12 device showed largely decreased current, and the blend device showed dramatically increased current.
Original language | English |
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Pages (from-to) | 2621-2623 |
Number of pages | 3 |
Journal | Chemistry of Materials |
Volume | 24 |
Issue number | 14 |
DOIs | |
State | Published - 24 Jul 2012 |
Keywords
- 2,4,6-trinitrotoluene
- chemical sensors
- organic field-effect transistors
- tetrakis(pentylthio) tetrathiafulvalene