Electrical "turn-On" response of poly(3,3"́- didodecylquaterthiophene) and electron donor blend transistors to 2,4,6-trinitrotoluene

Hoyoul Kong; Byung Jun Jung; Jasmine Sinha; Howard E. Katz

doi:10.1021/cm3012292

Electrical "turn-On" response of poly(3,3"́- didodecylquaterthiophene) and electron donor blend transistors to 2,4,6-trinitrotoluene

Hoyoul Kong, Byung Jun Jung, Jasmine Sinha, Howard E. Katz

Department of Materials Science and Engineering

Johns Hopkins University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Pure PQT12 and blended PQT12 with 1-20 wt % tetrakis(pentylthio)- tetrathiafulvalene (TPT-TTF) active layers were investigated by checking the output and transfer characteristics of bottom contact organic field-effect transistor (OFET). Normal OFET behavior was observed with pure PQT12. OFETs with several blend ratios were prepared and exposed to various solution concentrations of 2,4,6- trinitrotoluene (TNT). The increase in current observed in the blends after interaction with TNT analyte is found to be due to the formation of a type of complex between TNT and TPT-TTF, which inhibits the trap-induced current decrease caused by the TPT-TTF, and dominates the general dipole-trapping caused by TNT in pure PQT12. After exposure to the TNT solutions, the pure PQT12 device showed largely decreased current, and the blend device showed dramatically increased current.

Original language	English
Pages (from-to)	2621-2623
Number of pages	3
Journal	Chemistry of Materials
Volume	24
Issue number	14
DOIs	https://doi.org/10.1021/cm3012292
State	Published - 24 Jul 2012

Keywords

2,4,6-trinitrotoluene
chemical sensors
organic field-effect transistors
tetrakis(pentylthio) tetrathiafulvalene

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10.1021/cm3012292

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title = "Electrical {"}turn-On{"} response of poly(3,3{"}́- didodecylquaterthiophene) and electron donor blend transistors to 2,4,6-trinitrotoluene",

abstract = "Pure PQT12 and blended PQT12 with 1-20 wt \% tetrakis(pentylthio)- tetrathiafulvalene (TPT-TTF) active layers were investigated by checking the output and transfer characteristics of bottom contact organic field-effect transistor (OFET). Normal OFET behavior was observed with pure PQT12. OFETs with several blend ratios were prepared and exposed to various solution concentrations of 2,4,6- trinitrotoluene (TNT). The increase in current observed in the blends after interaction with TNT analyte is found to be due to the formation of a type of complex between TNT and TPT-TTF, which inhibits the trap-induced current decrease caused by the TPT-TTF, and dominates the general dipole-trapping caused by TNT in pure PQT12. After exposure to the TNT solutions, the pure PQT12 device showed largely decreased current, and the blend device showed dramatically increased current.",

keywords = "2,4,6-trinitrotoluene, chemical sensors, organic field-effect transistors, tetrakis(pentylthio) tetrathiafulvalene",

author = "Hoyoul Kong and Jung, \{Byung Jun\} and Jasmine Sinha and Katz, \{Howard E.\}",

year = "2012",

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doi = "10.1021/cm3012292",

language = "English",

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journal = "Chemistry of Materials",

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T1 - Electrical "turn-On" response of poly(3,3"́- didodecylquaterthiophene) and electron donor blend transistors to 2,4,6-trinitrotoluene

AU - Kong, Hoyoul

AU - Jung, Byung Jun

AU - Sinha, Jasmine

AU - Katz, Howard E.

PY - 2012/7/24

Y1 - 2012/7/24

N2 - Pure PQT12 and blended PQT12 with 1-20 wt % tetrakis(pentylthio)- tetrathiafulvalene (TPT-TTF) active layers were investigated by checking the output and transfer characteristics of bottom contact organic field-effect transistor (OFET). Normal OFET behavior was observed with pure PQT12. OFETs with several blend ratios were prepared and exposed to various solution concentrations of 2,4,6- trinitrotoluene (TNT). The increase in current observed in the blends after interaction with TNT analyte is found to be due to the formation of a type of complex between TNT and TPT-TTF, which inhibits the trap-induced current decrease caused by the TPT-TTF, and dominates the general dipole-trapping caused by TNT in pure PQT12. After exposure to the TNT solutions, the pure PQT12 device showed largely decreased current, and the blend device showed dramatically increased current.

AB - Pure PQT12 and blended PQT12 with 1-20 wt % tetrakis(pentylthio)- tetrathiafulvalene (TPT-TTF) active layers were investigated by checking the output and transfer characteristics of bottom contact organic field-effect transistor (OFET). Normal OFET behavior was observed with pure PQT12. OFETs with several blend ratios were prepared and exposed to various solution concentrations of 2,4,6- trinitrotoluene (TNT). The increase in current observed in the blends after interaction with TNT analyte is found to be due to the formation of a type of complex between TNT and TPT-TTF, which inhibits the trap-induced current decrease caused by the TPT-TTF, and dominates the general dipole-trapping caused by TNT in pure PQT12. After exposure to the TNT solutions, the pure PQT12 device showed largely decreased current, and the blend device showed dramatically increased current.

KW - 2,4,6-trinitrotoluene

KW - chemical sensors

KW - organic field-effect transistors

KW - tetrakis(pentylthio) tetrathiafulvalene

UR - https://www.scopus.com/pages/publications/84864364615

U2 - 10.1021/cm3012292

DO - 10.1021/cm3012292

M3 - Article

AN - SCOPUS:84864364615

SN - 0897-4756

VL - 24

SP - 2621

EP - 2623

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 14

ER -

Electrical "turn-On" response of poly(3,3"́- didodecylquaterthiophene) and electron donor blend transistors to 2,4,6-trinitrotoluene

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Keywords

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