Electrical/mechanical properties of porous low-k thin films by using various supramolecule based porogen

Jin Heong Yim, Young Kwon Park, Jong Ki Jeon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd.
Pages185-188
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
DOIs
StatePublished - 2007
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 10 Sep 200614 Sep 2006

Publication series

NameSolid State Phenomena
NumberPART 1
Volume124-126
ISSN (Print)1012-0394

Conference

ConferenceIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/TerritoryKorea, Republic of
CityJeju
Period10/09/0614/09/06

Keywords

  • Cyclodextrin
  • Low-k
  • Nanoporous
  • Thin films

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