TY - JOUR
T1 - Electronic and magnetic properties of single-layer M PX3 metal phosphorous trichalcogenides
AU - Chittari, Bheema Lingam
AU - Park, Youngju
AU - Lee, Dongkyu
AU - Han, Moonsup
AU - Macdonald, Allan H.
AU - Hwang, Euyheon
AU - Jung, Jeil
N1 - Publisher Copyright:
© 2016 American Physical Society.
PY - 2016/11/22
Y1 - 2016/11/22
N2 - We survey the electronic structure and magnetic properties of two-dimensional (2D) MPX3 (M=V,Cr,Mn,Fe,Co,Ni,Cu,Zn, and X=S,Se,Te) transition-metal chalcogenophosphates to shed light on their potential role as single-layer van der Waals materials that possess magnetic order. Our ab initio calculations predict that most of these single-layer materials are antiferromagnetic semiconductors. The band gaps of the antiferromagnetic states decrease as the atomic number of the chalcogen atom increases (from S to Se to Te), leading in some cases to half-metallic ferromagnetic states or to nonmagnetic metallic states. We find that the competition between antiferromagnetic and ferromagnetic states can be substantially influenced by gating and by strain engineering. The sensitive interdependence we find between magnetic, structural, and electronic properties establishes the potential of this 2D materials class for applications in spintronics.
AB - We survey the electronic structure and magnetic properties of two-dimensional (2D) MPX3 (M=V,Cr,Mn,Fe,Co,Ni,Cu,Zn, and X=S,Se,Te) transition-metal chalcogenophosphates to shed light on their potential role as single-layer van der Waals materials that possess magnetic order. Our ab initio calculations predict that most of these single-layer materials are antiferromagnetic semiconductors. The band gaps of the antiferromagnetic states decrease as the atomic number of the chalcogen atom increases (from S to Se to Te), leading in some cases to half-metallic ferromagnetic states or to nonmagnetic metallic states. We find that the competition between antiferromagnetic and ferromagnetic states can be substantially influenced by gating and by strain engineering. The sensitive interdependence we find between magnetic, structural, and electronic properties establishes the potential of this 2D materials class for applications in spintronics.
UR - http://www.scopus.com/inward/record.url?scp=84997610903&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.94.184428
DO - 10.1103/PhysRevB.94.184428
M3 - Article
AN - SCOPUS:84997610903
SN - 2469-9950
VL - 94
JO - Physical Review B
JF - Physical Review B
IS - 18
M1 - 184428
ER -