Abstract
Electronic and optical properties of a- (φ = 0) and plane (φ φ/= 6) InGaN-GaN quantum-well (QW) structures investigated using the multiband effective-mass theory with an arbitrary crystal orientation. These results arecompared with those c-plane or (0001)-oriented wurtzite InGaN-GaNQWs.We derive explicitly the Hamiltonians with their elements and the interband optical matrix elements with polarization dependence for the a-,m-, and c-planes. The bandgap transition wavelength of the QW structure with them-plane is found to be longer than that of theQW structures with the a-plane. The average hole effective masses of topmost valence band along k′y for the a- andm-planes are significantly lower than that of the c-plane. Here, the prime indicates physical quantities in a general crystal orientation. In addition, their optical gain and optical matrix element show strong in-plane anisotropy. The optical gain of the y′-polarization is much larger than that of the -polarization because the optical matrix element the -polarization is larger than that of the x′-polarization.
Original language | English |
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Pages (from-to) | 1175-1182 |
Number of pages | 8 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 43 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2007 |
Keywords
- A-plane
- C-plane
- InGaN-GaN
- M-plane
- Non-Markovian
- Nonpolar
- Optical gain
- Quantum well (QW)