Electronic properties of a-Si:H deposited with hydrogen or helium dilution

F. Zhong, W. S. Hong, V. Perez-Mendez, C. C. Chen, J. D. Cohen

Research output: Contribution to journalConference articlepeer-review


We have applied the Drive-Level Capacitance Profiling (DLCP) method to n-i-p a-Si:H diodes to characterize the mid-gap defect densities in the i layer. Our results show that there are no significant changes in the drive-level densities, Ndl, in n-i-p diodes and p+-i-m as well as n-i-m Schottky diodes, which indicates that DLCP can directly provide reliable energy distribution and spatial distribution of the mid-gap defects in the n-i-p device. We have found that the ratio of Ndl to ND*, the ionized defect density determined by hole onset measurement, is changed with the deposition conditions; it is 3 for standard samples, 2 for helium diluted samples and 6 for hydrogen diluted samples. These results indicate that there may be different defect distributions in these materials, which suggest the ratio of charged (D-) density to the neutral defect (D0) density may be altered when growth conditions are varied.

Original languageEnglish
Pages (from-to)363-368
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199612 Apr 1996


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