Energy level alignment between C                         60                          and Al using ultraviolet photoelectron spectroscopy

J. H. Seo; S. J. Kang; C. Y. Kim; S. W. Cho; K. H. Yoo; C. N. Whang

doi:10.1016/j.apsusc.2005.12.095

Energy level alignment between C ₆₀ and Al using ultraviolet photoelectron spectroscopy

J. H. Seo, S. J. Kang, C. Y. Kim, S. W. Cho, K. H. Yoo, C. N. Whang

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The energy level alignment between C ₆₀ and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C ₆₀ and Al, C ₆₀ was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C ₆₀ deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C ₆₀ layers. The observed vacuum level shift means that the interface dipole exists at the interface between C ₆₀ and Al. The barrier height of electron injection from Al to C ₆₀ is 0.11 eV, which is smaller value than that of hole injection.

Original language	English
Pages (from-to)	8015-8017
Number of pages	3
Journal	Applied Surface Science
Volume	252
Issue number	22
DOIs	https://doi.org/10.1016/j.apsusc.2005.12.095
State	Published - 15 Sep 2006

Keywords

Al
C
Electronic structure
Ultraviolet photoelectron spectroscopy

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10.1016/j.apsusc.2005.12.095

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@article{8d6ff705668943468da001aafd600b72,

title = " Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy ",

abstract = " The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.",

keywords = "Al, C, Electronic structure, Ultraviolet photoelectron spectroscopy",

author = "Seo, {J. H.} and Kang, {S. J.} and Kim, {C. Y.} and Cho, {S. W.} and Yoo, {K. H.} and Whang, {C. N.}",

year = "2006",

month = sep,

day = "15",

doi = "10.1016/j.apsusc.2005.12.095",

language = "English",

volume = "252",

pages = "8015--8017",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "22",

}

TY - JOUR

T1 - Energy level alignment between C 60 and Al using ultraviolet photoelectron spectroscopy

AU - Seo, J. H.

AU - Kang, S. J.

AU - Kim, C. Y.

AU - Cho, S. W.

AU - Yoo, K. H.

AU - Whang, C. N.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.

AB - The energy level alignment between C 60 and Al has been investigated by using ultraviolet photoelectron spectroscopy. To obtain the interfacial electronic structure between C 60 and Al, C 60 was deposited on a clean Al substrate in a stepwise manner. The valence-band spectra were measured immediately after each step of C 60 deposition without breaking the vacuum. The measured onset of the highest occupied molecular orbital energy level was located at 1.59 eV from the Fermi level of Al. The vacuum level was shifted 0.68 eV toward lower binding energy with additional C 60 layers. The observed vacuum level shift means that the interface dipole exists at the interface between C 60 and Al. The barrier height of electron injection from Al to C 60 is 0.11 eV, which is smaller value than that of hole injection.

KW - Al

KW - C

KW - Electronic structure

KW - Ultraviolet photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=33747885686&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.12.095

DO - 10.1016/j.apsusc.2005.12.095

M3 - Article

AN - SCOPUS:33747885686

SN - 0169-4332

VL - 252

SP - 8015

EP - 8017

JO - Applied Surface Science

JF - Applied Surface Science

IS - 22

ER -

Energy level alignment between C ₆₀ and Al using ultraviolet photoelectron spectroscopy

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Keywords

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